News — Industry - Optical & Photonics

Researchers at Tohoku University have discovered a method to quickly, cost-effectively, and non-destructively detect carbon impurities in nitride-based crystals that are used in electrical and optical devices such as LEDs and t...

Researchers at the University of Delaware have developed a new, high-electron mobility transistor based on gallium nitride (GaN) with a barrier of indium aluminum-nitride on top of a silicon substrate.

Researchers at the University of Illinois at Chicago have used computer-based simulations to discover the general mechanism that governs crystal growth in materials – fluctuations in the solvent shield.

Researchers at the University of California Santa Barbara have developed an improved fabrication technique to develop deep-ultraviolet light-emitting diodes (LEDs) and optoelectronics that combat dangerous pathogens.  

Researchers at Cornell University have found a heretofore unrealized property of gallium nitride (GaN) that could cause significant improvements in the electronic and wireless communication industries.