4 in Silicon Carbide 4H-SiC N-Type Ingot, Production Grade
SKU: SOWA0302
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4 in Silicon Carbide 4H-SiC N-Type Ingot, Production Grade
Grade | Production Grade |
Diameter | 100.0 mm +/- 0.5 mm |
Wafer Orientation | Off axis: 4.0 deg toward <11-20> +/-0.5 deg |
Electrical Resistivity (Ohm-cm) | 0.015~0.028 |
Primary Flat | {10-10} +/- 5.0 deg |
Primary Flat Length | 32.5 mm +/- 2.0 mm |
Secondary Flat Length | 18.0 mm +/- 2.0 mm |
Secondary Flat Orientation | Silicon face: 90 deg CW from Primary flat +/- 5.0 deg |
Cracks inspected by high intensity light | <1mm in radial |
Hex Plates inspected by high intensity light* | Cumulative area 1 % |
Polytype Areas inspected by high intensity light* | None |
MicroPipe Density | <2cm-2 |
Edge chipping | 1 allowed, 1mm each |
Note | The slicing wafer thickness <1mm, >80% (two ends not included) meet the above requirements |
PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS
Property |
4H-SiC Single Crystal |
6H-SiC Single Crystal |
Lattice Parameters (Å) |
a=3.076 c=10.053 |
a=3.073 c=15.117 |
Stacking Sequence |
ABCB |
ABCACB |
Density |
3.21 |
3.21 |
Mohs Hardness |
~9.2 |
~9.2 |
Thermal Expansion Coefficient (CTE) (/K) |
4-5 x 10-6 |
4-5 x10-6 |
Refraction Index @750nm |
no = 2.61 ne = 2.66 |
no = 2.60 ne = 2.65 |
Dielectric Constant |
c ~ 9.66 |
c ~ 9.66 |
Doping Type |
N-type or Semi-insulating |
N-type or Semi-insulating |
Thermal Conductivity (W/cm-K @298K) (N-type, 0.02 ohm-cm) |
a~4.2 c~3.7 |
|
Thermal Conductivity (W/cm-K @298K) (Semi-insulating type) |
a~4.9 c~3.9
|
a~4.6 c~3.2
|
Band-gap (eV) |
3.23 |
3.02 |
Break-Down Electrical Field (V/cm) |
3-5 x 106 |
3-5 x 106 |
Saturation Drift Velocity (m/s) |
2.0 x 105 |
2.0 x 105 |
Wafer and Substrate Sizes |
Wafers: 2, 4, 6, 8 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request |
Price
MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to eight (8) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.
Customization
Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.