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Customized GaN-on-SiC Epitaxial Wafers, 100mm and 150mm
SKU: CS0064
To better serve you, we would like to discuss your specific requirement.
Please Contact Us for a quote.
Gallium Nitride on Silicon Carbide Epitaxial Wafers
Customized GaN-on-SiC epitaxial wafers are available from MSE Supplies. Please contact us for a quote for customized GaN on SiC epi-wafers.
100mm or 150mm GaN Epi-wafers on SiC substrates (both N type and Semi-Insulating type are available). Our GaN-on-SiC wafers are grown by the MOCVD process using AIXTRON and Veeco equipment. Custom-made wafers in 4 inch and 6 inch sizes are available. Our GaN epi-wafers have been proven for high performance DC/RF applications.
An example of GaN-on-SiC wafer epitaxial layer structure
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In-situ SiN (optional) |
Optional in-situ nitride available upon request |
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GaN cap |
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AlGaN Barrier |
Barrier customized based on applications |
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AlN Spacer |
High -uniformity spacer for mobility boost |
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GaN Channel |
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GaN:Fe Buffer |
Buffer profile designed for high isolation and low RF trapping |
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AlN Nucleation |
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Semi-insulating SiC Substrate |
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Epi Structure |
Key Specs |
Characterization |
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Substrate thickness (μm) |
500 ±25 or customized |
Microsense Profilometer |
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Total epi thickness (micron) |
0.6 ~ 2.5 or customized |
PL |
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Dislocation density (/cm2) |
≤ 108 |
XRD |
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XRD Rocking Curve |
(004) ≤ 200 arc sec (102) ≤ 250 arc sec |
XRD |
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Epi sheet resistance (Rsh) |
225 ~ 450 Ω/sq or customized |
Lehighton |
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Rsh uniformity |
Rsh Stdev. ≤ 2% |
Lehighton |
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Carrier concentration (/cm2) |
0.8 ~ 1.1 X1013 or customized |
Lehighton |
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Carrier mobility（cm2V-1s-1) |
≥2100 |
Lehighton |
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Epi surface roughness (RMS) |
≤ 0.5 nm |
AFM |
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Wafer thickness (TTV) |
≤ 10 μm |
Microsense Profilometer |
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Wafer Bow & Wrap |
≤ 30 μm |
Microsense Profilometer |
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In situ Nitride |
Available upon request |
Available upon request |
Representative device performance data using 0.45um process
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Performance Target |
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Pinch-off Voltage (Ids=1mA/mm) |
-2.7 ~ -3.3 |
V |
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Idss (Vgs=0V, Vds=10V) |
700~800 |
mA/mm |
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Idmax (Vgs=1V, Vds=10V) |
950~1100 |
mA/mm |
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Max. GM (Vds=10V) |
~300 |
mS/mm |
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Breakdown VDG (Id=0.1mA/mm) |
>200 |
V |
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Ft (Vds=50V) |
>15 |
GHz |
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Rc |
~0.35 |
Ohm.mm |
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Drain and gate leakage current (Vgs=- 5V, Vds=50V) |
<0.01 |
mA/mm |
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Vf |
1.2~1.3 |
V |
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Pulsed IV Drain Lag |
>80 |
% |