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MSE PRO Graphene Field-Effect Transistors (GFETs) for Sensing Applications
SKU: ME0627
Graphene Field-Effect Transistors GFET (Die size 10 mm x 10 mm) for Sensing Applications
The ME0627 GFET chip provides 36 graphene devices dispersed in a grid pattern on the chip. Thirty devices have a Hall-bar geometry and six have a 2-probe geometry. The Hall-bar devices can be used for Hall-bar measurements as well as 4-probe and 2-probe devices. There are varying graphene channel dimensions to allow investigation of geometry dependence on device properties. It has Cr/Au contacts which are inert and stable.
Graphene Oxide FET chip is also available at MSE Supplies.
SKU#: ME0627
Measurement Protocols and Handling Instructions
FEATURES
- State-of-the-art GFETs utilizing high-quality graphene
- Devices not encapsulated ready for your functionalization
- Perfect platform device for new sensor research and development
- 36 individual GFETs per chip
- Mobilities typically in excess of 1000 cm2/V.s
- Processed in Clean Room Class 1000
APPLICATIONS
- Graphene device research
- Chemical sensors
- Biological sensors (biosensors)
- Bioelectronics
- Magnetic sensors
- Photodetectors
|
TYPICAL SPECIFICATIONS |
|
|
Chip dimensions |
10 mm x 10 mm |
|
Chip thickness |
675 μm |
|
Number of GFETs per chip |
36 |
|
Gate Oxide thickness |
90 nm |
|
Gate Oxide material |
SiO2 |
|
Resistivity of substrate |
1-10 Ω.cm |
|
Metallization |
Chromium/Gold 2/50 nm |
|
Graphene field-effect mobility |
> 1000 cm2/V.s |
|
Dirac point |
< 50 V |
|
Yield |
> 75 % |
|
ABSOLUTE MAXIMUM RATINGS |
|
|
Maximum gate-source voltage |
± 50 V |
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Maximum temperature rating |
150 °C |
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Maximum drain-source current density |
107 A.cm-2 |
|
CHANNEL GEOMETRIES |
||||
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Description |
Width (µm) |
Length 1 (µm) |
Length 2 (µm) |
Quantity |
|
Standard |
50 |
30 |
50 |
12 |
|
Varying Width |
10 |
30 |
50 |
1 |
|
20 |
1 |
|||
|
30 |
1 |
|||
|
40 |
1 |
|||
|
100 |
1 |
|||
|
200 |
1 |
|||
|
Large Square |
100 |
80 |
100 |
1 |
|
200 |
180 |
200 |
1 |
|
|
Varying Length |
50 |
10 |
30 |
1 |
|
20 |
40 |
1 |
||
|
40 |
60 |
1 |
||
|
50 |
70 |
1 |
||
|
80 |
100 |
1 |
||
|
180 |
200 |
1 |
||
|
Small 2-probe |
5 |
5 |
- |
3 |
|
10 |
10 |
- |
3 |
|
References:
W. Fu, L. Jiang, E.P. van Geest, L.M.C. Lima, G.F. Schneider Sensing at the Surface of Graphene Field‐Effect Transistors. Advanced Materials Vol 29(6), 2017.
J. Ping, R. Vishnubhotla, A. Vrudhula, and A.T.C. Johnson Scalable Production of High-Sensitivity, Label-Free DNA Biosensors Based on Back-Gated Graphene Field Effect Transistors. ACS Nano Vol 10(9), 2016.