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LaAlO3 Lanthanum Aluminate Crystal Substrates
SKU: SU1312
LaAlO3 single crystal substrates are commonly used for epitaxial growth of thin films such as high Tc superconductors, magnetic and ferroelectric materials. The dielectric properties of LaAlO3 crystal make it suitable for low loss microwave and dielectric resonance electronics applications. MSE Supplies can supply a wide range of LaAlO3 single crystals and epi-ready crystal substrates to meet customer's specific requirements
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Main Parameters
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Crystal system
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Hexagonal (room temperature)
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Cube (> 435 deg C>
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Lattice constant
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Hexagonal a = 5.357A c = 13.22 A
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Cubic a = 3.821 A
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Melting point (°C)
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2080
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| Band gap | 5.6 eV | |
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Density
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6.52 (g/cm3)
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Hardness
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6-6.5 (mohs)
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Thermal expansion coefficient
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9.4x10-6 / deg C
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Permittivity
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21
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Loss tangent (10 GHz)
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~ 3 x 10-4 @ 300K, ~ 0.6 x 10-4 @ 77K
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Color and Appearance
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Based on annealing conditions, from brown-yellow to brown color. Polished substrate surface shows natural twinned domain
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Chemical stability
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Insoluble in mineral acids at 25 deg C and soluble in H3PO3 at > 150 deg C
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Growth method
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Czochralski method
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| Domains | Multi-domains | |
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Size
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5x5, 10x5, 10x10, 15x15, 20x15, 20x20 mm, other sizes are available upon request
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D = 15, 20, 1 ", 2"
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Thickness
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0.5mm, 1.0mm
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Polishing
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Single or double side polished
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Crystal orientation
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<100> <110> <111>
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Crystal orientation accuracy
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+/- 0.5 degree
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Surface Roughness, Ra:
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<0.5 nm (5 x 5 um area) epi-ready
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Package
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sealed in a class 100 clean bag packed in class 1000 clean room
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