MSE PRO 10 mm x 10 mm A-plane <11-20> 4H N-Type SiC, Silicon Carbide Crystal Substrate

Size

10 mm x 10 mm 

Thickness

350 um  

Type

4H-N

Resistivity

0.015 ~ 0.028 ohm.cm

Surface Roughness

Polished on both sides Ra < 1 nm 

Property

4H-SiC Single Crystal

6H-SiC Single Crystal

Lattice Parameters (Å)

a=3.076

c=10.053

a=3.073

c=15.117

Stacking Sequence

ABCB

ABCACB

Density

3.21

3.21

Mohs Hardness

~9.2

~9.2

Thermal Expansion Coefficient (CTE) (/K)

4-5 x 10^-6

4-5 x10^-6

Refraction Index @750 nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant

c ~ 9.66

c ~ 9.66

Doping Type

N-type or Semi-insulating

N-type or Semi-insulating

Thermal Conductivity (W/cm-K @298 K)

(N-type, 0.02 ohm-cm)

a~4.2

c~3.7

Thermal Conductivity (W/cm-K @298 K)

(Semi-insulating type)

a~4.9

c~3.9

a~4.6

c~3.2

Band-gap (eV)

3.23

3.02

Break-Down Electrical Field (V/cm)

3-5 x10⁶

3-5 x10⁶

Saturation Drift Velocity (m/s)

2.0 x 10⁵

2.0 x 10⁵

Wafer and Substrate Sizes

Wafers: 2, 3, 4, 6 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request

Product Grades

A Grade Zero micropipe density (MPD 1 cm^-2)

B Grade Production grade (MPD 5 cm^-2)

C Grade Research grade (MPD 15 cm^-2)

D Grade Dummy grade (MPD 30 cm^-2)