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MSE PRO 2 inch 3C-N Type Silicon Carbide Wafers (3C-SiC), Dummy Grade– MSE Supplies LLC

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MSE PRO 2 inch 3C-N Type Silicon Carbide Wafers (3C-SiC), Dummy Grade - MSE Supplies LLC

MSE PRO 2 inch 3C-N Type Silicon Carbide Wafers (3C-SiC), Dummy Grade

SKU: WA0377

  • $ 1,58895

MSE PRO™ 2 inch 3C-N Type Silicon Carbide Wafers (3C-SiC), Dummy Grade

MSE Supplies offers 2 inch 3C-N Silicon Carbide Wafers N-Type SiC Substrates. It has a crystal structure of silicon carbide where the silicon and carbon atoms are arranged in a cubic lattice with diamond-like structure. It has several superior properties than the widely used 4H-SiC, such as higher electron mobility and saturation velocity. The performance of 3C-SiC power devices is expected to be better, cheaper, and easier to manufacture than the currently mainstream 4H-SiC wafer. It is exceptionally suitable for power electronic devices.

Specification:

Grade Dummy Grade
Diameter 50.8 mm +/- 0.5 mm
Thickness 350 um +/- 25 um
Wafer Orientation On axis: <111> +/-0.5 deg
Polytype 3C
Micropipe Density (MPD) <0.5 cm-2
Electrical Resistivity ≤0.0008 Ohm.cm
Primary Flat Orientation <1-10>+/-5 deg
Primary Flat Length 15.9mm+/-1.7mm
TTV ≤5um
Bow ≤15um
Warp ≤30um
Roughness C face polish Ra≤1nm
Si face CMP Ra≤0.2nm

* Please contact us if you need more detailed specification.

**For production grade, please contact us for availability.

PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property

4H-SiC Single Crystal

3C-SiC Single Crystal

Lattice Parameters (Å)

a=3.082

c=10.092

a=4.35
Stacking Sequence  ABCB  ABC

Density (g/cm³)

3.23

2.36

Mohs Hardness

~9.2

~9.2

Thermal Expansion Coefficient (CTE) (/K)

4-5 x 10-6

3-4 x10-6

Dielectric Constant

c ~ 9.66

c ~ 9.72

Doping Type

N-type or Semi-insulating or P-type

N-type 

Band-gap (eV)

3.26

2.4

Saturation Drift Velocity (m/s)

2.0 x 105

2.7 x 105

Wafer and Substrate Sizes

Wafers: 2, 4, 6 inch; smaller substrates: 5x5, 10x10mm, other sizes are available and can be custom-made upon request

 Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.