Thank you!

Your quote has been successfully submitted!

For products requiring additional information, our team will contact you within 1 business day

Failed

There was an error submitting your quote. Please try again.

2 inch Silicon Carbide Wafers 4H/6H P-Type SiC Substrate (Dummy Grade)– MSE Supplies LLC

Overstock Sale - Select Products 10% Off on Orders of $500 or More! Promo Code:

SAVING10

Shop Now
Menu

This product has been added to the cart.

MSE PRO 2 inch Silicon Carbide Wafers 4H/6H P-Type SiC Substrates (Dummy Grade) - MSE Supplies LLC

MSE PRO 2 inch Silicon Carbide Wafers 4H/6H P-Type SiC Substrates (Dummy Grade)

SKU: WA0362

  • $ 95395



MSE PRO™ 2 inch diameter Silicon Carbide (SiC) Crystal Substrate, 4H/6H P-type SiC Wafers (Dummy Grade)

MSE Supplies offers 2 inch P-Type Silicon Carbide (SiC) Wafer in either 4H or 6H polytype. It has similar properties as the N-type Silicon Carbide (SiC) wafer, such as high temperature resistance, high thermal conductivity, high electrical conductivity, etc. P-type SiC substrate is generally used for manufacturing power devices, especially the manufacturing of Insulated Gate Bipolar Transistors (IGBT). The design of IGBT often involves P-N junctions, where P-type SiC can be advantageous for controlling the behavior of the devices.

Specification:

Grade

Research Grade

Dummy Grade

Diameter

50.8 mm +/- 0.5 mm

Thickness

350 um +/- 25 um

Wafer Orientation

Off axis: 2.0°~4.0° toward <11-20> ±0.5°

Polytype (Dummy Grade) 4H (WA0362) ; 6H (WA0363)

Micropipe Density (MPD)

<0.5 cm-2

<0.5 cm-2

Electrical Resistivity (Ohm.cm) 0.07~0.12 0.12~0.3
Dopant Aluminum (Al)

* Please contact us for detail specification.

**For production grade, please contact us for availability.

PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property

4H-SiC Single Crystal

6H-SiC Single Crystal

Lattice Parameters (Å)

a=3.076

c=10.053

a=3.073

c=15.117

Stacking Sequence

ABCB

ABCACB

Density (g/cm³)

3.21

3.21

Mohs Hardness

~9.2

~9.2

Thermal Expansion Coefficient (CTE) (/K)

4-5 x 10-6

4-5 x10-6

Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant

c ~ 9.66

c ~ 9.66

Doping Type

N-type or Semi-insulating or P-type

N-type or Semi-insulating or P-type

Band-gap (eV)

3.23

3.02

Break-Down Electrical Field (V/cm)

3-5 x 106

3-5 x 106

Saturation Drift Velocity (m/s)

2.0 x 105

2.0 x 105

Wafer and Substrate Sizes

Wafers: 2, 4 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request

 

Price

MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to eight (8) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.

Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.