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MSE PRO 4 inch Carbon-doped Semi-insulating Gallium Nitride Single Crystal
SKU: WA0262
MSE PRO™ 4 inch Carbon-doped Semi-insulating Gallium Nitride Single Crystal
MSE Supplies offers high quality Production Grade 4 inch C-doped Semi-insulating Gallium Nitride Single Crystal. It has low dislocation density (on the order of 105 /cm2) and uniform surface with no periodic defects. These high quality GaN crystals have an usable area of more than 90%. Customers from all over the world have trusted MSE Supplies as their preferred supplier of GaN crystal substrates. These GaN free standing is widely used for laser diodes, power electronics, RF devices, etc.
Specification:
| SKU# | WA0262 | WA0263 | WA0264 |
| Grade | Production Grade | Research Grade | Dummy Grade |
| Diameter | 100 ± 0.3 mm | ||
| Thickness | 450 ± 30 um | ||
| Conductivity Type | Semi-insulating | ||
| Dopant | Carbon doping | ||
| Wafer Orientation | Orientation: C-plane (0001) off angle toward M-axis 0.5 deg ± 0.15 deg | ||
| FWHM (002) | < 80 arcsec | ||
| FWHM (102) | < 80 arcsec | ||
| Electrical Resistivity (300K) | > 1E8 Ohm-cm | ||
| Usable area | ≥ 90 % | ≥80 % | ≥ 70 % |
| Primary Flat Orientation | M-plane (10-10) ± 2 deg | ||
| Primary Flat Length | 32 ± 1 mm | ||
| Secondary Flat Orientation | Ga face, 90° clockwise from primary flat orientation flat plane | ||
| Secondary Flat Length | 18 ± 1 mm | ||
| TTV | ≤ 30 um | ||
| Bow | ± 30 um | ||
| Edge bevel | Beveled | ||
| Polishing | Single side polished, Front surface: Ra < 0.5 nm; double side polished available upon request |
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| Package | packaged in a class 100 clean room environment, in single wafer container | ||
Please contact us for bulk order or customization.
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