MSE PRO 4 inch Silicon-on-Insulator (SOI) Wafer (Device: 8μm; Box: 1μm)
SKU: WA2603
MSE PRO™ 4 inch Silicon-on-Insulator (SOI) Wafer (Device: 8μm; Box: 1μm)
Silicon-on-Insulator (SOI) wafer is a structure including the device layer (top), buried oxide layer (middle), and handle wafer (bottom). This technology allows for the continuous miniaturization of microelectronic devices. It has several advantages over a traditional silicon wafer, like low leakage currents and parasitic capacitance. It is used in various applications, including MEMS, sensors, telecommunications, and power devices. For example, the researchers at Toyota Central R&D Labs proposed simple T-shaped support as a solution to the tilt deformation caused by the residual stress. This solution could potentially allow for the development of high-precision sensors and actuators.
Types of SOI Wafers:
SIMOX: Device Layer Thickness < 250nm
BESOI: Device Layer Thickness between 1 μm ~ 300μm
SIMBOND: Device Layer Thickness < 200nm
Smart-Cut: Device Layer Thickness < 1.5μm
Specification:
Parameter |
Specification Range |
Diameter |
100 ± 0.2 mm |
Handle Wafer |
|
Thickness |
390 ± 5 µm |
Orientation |
(100) ± 1 deg |
Type |
P / Any |
Resistivity |
0.01-0.02 ohm.cm |
Backside |
Polished with oxide and lasermark |
Box Layer |
|
Thickness |
10000 ± 1000 Å |
Device Layer |
|
Thickness |
8 ± 1 µm |
Type/Dopant |
P / Boron |
Orientation |
(100) ± 0.5 deg |
Resistivity |
0.001-0.002 ohm.cm |
Quantity |
1 piece |
*The figure is for reference only. The actual product may look different due to configuration difference.
Please contact us for customized SOI wafer.
References: