Applications:
- Non-linear Optics
- Electro–optics Modulators
- Ferroelectric Memory Devices
- Others
Specification:
General Wafer | |
Structure | LiNbO3/ Oxide / Si |
Diameter | Φ150 ± 0.2 mm |
Thickness | 675 ± 25 μm |
Primary Flat Length | 47.5 ± 2 mm |
Wafer Beveling | R Type |
TTV | < 10 μm |
LTV | < 1.5 μm (5∗5 mm2) / 95% |
Bow | ± 50 μm |
Warp | < 50 μm |
Edge Trimming | 2 ± 0.5 mm |
Lithium Niobate Layer | |
Average Thickness (Can be customized between 300-600nm) |
360 nm (WA4004) 600 nm (WA4005) |
Orientation | X axis ± 0.5° |
Primary Flat Orientation | Z axis ± 1° |
Front Surface Roughness (Ra) | < 1 nm |
Bond Defects | > 1 mm None ; ≦ 1 mm within 80 total |
Front Surface Scratch |
> 1 cm None ; ≦ 1 cm within 3 total |
Oxide Layer | |
Thickness | 4700 ± 150 nm |
Uniformity | ± 5% |
Substrate | |
Material | Si |
Orientation | <100> ± 1° |
Primary Flat Orientation | <110> ± 1° |
Resistivity | > 10 kΩ·cm |
Backside | Etched |