Applications:
- Non-linear Optics
- Electro–optics Modulators
- Ferroelectric Memory Devices
- Others
Specification:
General Wafer | |
Structure | LiNbO3/ Oxide / Si |
Diameter | Φ200 ± 0.2 mm |
Thickness | 725 ± 25 μm |
Primary Flat Length | Notch |
Wafer Beveling | R Type |
Edge Exclusion | 8 mm |
Edge Trimming | 4 ± 0.5 mm |
Lithium Niobate Layer | |
Average Thickness |
600 ±15 nm (WA4012) |
Orientation | X axis ± 0.3° |
Primary Flat Orientation (Notch) | Z axis ± 1° |
Front Surface Roughness (Ra) | < 0.5 nm |
Bond Defects | > 20 mm None ; 1-20mm within 10; ≦ 1 mm within 300 total |
Front Surface Scratch |
> 2 cm None ; ≦ 2 cm within 5 total |
Oxide Layer | |
Thickness | 4700 ± 200 nm |
Uniformity | < 2% @ 17 points |
Substrate | |
Material | Si |
Orientation | <100> ± 1° |
Primary Flat Orientation | <110> ± 1° Notch |
Resistivity | > 10 kΩ·cm |
Backside | Etched |