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Customized SiC Epitaxial Wafers on SiC Substrates
SKU: CS0081
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Customized silicon carbide SiC epitaxial wafers can be provided by MSE Supplies to meet your specific project requirements. Both semi-insulating and N-type SiC substrates are available. The epitaxial SiC layer can also be grown with the CVD process to be either N-type or P-type with controlled doping concentration and layer thickness.Wafer characterization reports based on advanced analytical methods, such as SIMS and XRD, are available to guarantee the quality of our SiC epi wafers
SiC epitaxial wafers have the advantages of operating under high-voltage, high electric current, and at high temperatures compared to semiconductor devices based on silicon. These unique features of SiC epitaxial wafers lead to the miniaturization of devices, enabling smaller and lighter power control modules to be made.
Customer Success Story: NASA uses custom-made SiC epitaxial wafers and SiC substrates supplied by MSE Supplies to develop high temperature and smart silicon carbide electronics and sensors.
PROPERTIES OF 4H SILICON CARBIDE SUBSTRATES
|
Property |
4H-SiC Single Crystal |
|
Lattice Parameters (A) |
a=3.076 c=10.053 |
|
Stacking Sequence |
ABCB |
|
Density (g/cm3) |
3.21 |
|
Mohs Hardness |
~9.2 |
|
Thermal Expansion Coefficient (CTE) (/K) |
4-5 -6 |
|
Refraction Index @750nm |
no = 2.61 ne = 2.66 |
|
Dielectric Constant |
c ~ 9.66 |
|
Doping Type |
N-type or Semi-insulating |
|
Thermal Conductivity (W/cm K @298K) (N-type, 0.02 Ohm-cm) |
a~4.2 c~3.7 |
|
Thermal Conductivity (W/cm K @298K) (Semi-insulating type) |
a~4.9 c~3.9 |
|
Band-gap (eV) |
3.23 |
|
Break-Down Electrical Field (V/cm) |
3 x 106 |
|
Saturation Drift Velocity (m/s) |
2.0 x 105 |
|
Wafer and Substrate Sizes |
Wafers: 6 inch, other sizes may be available and can be custom-made upon request |
|
Product Grades - SiC substrates |
A Grade Zero micropipe density (MPD 1 cm-2) B Grade Production grade (MPD 5 cm-2) |
Price
MSE Supplies offers the best price on the market for high quality SiC epitaxial wafers up to six (6) inch diameter. Our price matching policy guarantees you the best price for the SiC epi wafers with comparable specifications. CONTACT US today to get your quote.
Customization
Customized SiC epi-wafer products can be made to meet customer's requirements and specifications.Both semi-insulating and N-type SiC substrates are available. The epitaxial SiC layer can also be grown with the CVD process to be either N-type or P-type with controlled doping concentration and layer thickness.Contact us today to discuss your requirements with our scientists and engineers.