Applications:
- Non-linear Optics
- Electro–optics Modulators
- Ferroelectric Memory Devices
- Others
Specification:
| General Wafer | |
| Structure | LiNbO3/ Oxide / Si |
| Diameter | Φ200 ± 0.2 mm |
| Thickness | 725 ± 25 μm |
| Primary Flat Length | Notch |
| Wafer Beveling | R Type |
| Edge Exclusion | 8 mm |
| Edge Trimming | 4 ± 0.5 mm |
| Lithium Niobate Layer | |
|
Average Thickness |
600 ±15 nm (WA4012) |
| Orientation | X axis ± 0.3° |
| Primary Flat Orientation (Notch) | Z axis ± 1° |
| Front Surface Roughness (Ra) | < 0.5 nm |
| Bond Defects | > 20 mm None ; 1-20mm within 10; ≦ 1 mm within 300 total |
| Front Surface Scratch |
> 2 cm None ; ≦ 2 cm within 5 total |
| Oxide Layer | |
| Thickness | 4700 ± 200 nm |
| Uniformity | < 2% @ 17 points |
| Substrate | |
| Material | Si |
| Orientation | <100> ± 1° |
| Primary Flat Orientation | <110> ± 1° Notch |
| Resistivity | > 10 kΩ·cm |
| Backside | Etched |