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MSE PRO 5N Gallium Phosphide (GaP) Pieces (1-5mm) Evaporation Materials– MSE Supplies LLC

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High Purity 5N (99.999%) Gallium Phosphide (GaP) Pieces (1-5mm) Evaporation Materials - MSE Supplies LLC

MSE PRO High Purity 5N (99.999%) Gallium Phosphide (GaP) Pieces (1-5mm) Evaporation Materials

SKU: TA2030

  • £48200
  • Save £5400

MSE PRO™ High Purity 5N (99.999%) Gallium Phosphide (GaP) Pieces (1-5mm) Evaporation Materials

Gallium Phosphide (GaP) is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. It can be used to created n-type or p-type semiconductors by adding different kinds of dopants. When evaporated, it is used to created optical coating. Its refractive index varies between ~3.2 and 5.0 across the visible range, which is higher than most of other semiconducting materials. In its transparent range, its index is higher than almost any other transparent material, including gemstones such as diamond, or non-oxide lenses such as zinc sulfide.

The dimensions and purities can be customized upon request. Please contact us for customization or bulk orders.

Name Gallium Phosphide
Chemical Formula GaP
CAS # 12063-98-8
SKU# 
  • TA2030: 25g
Molecule Weight (g/mol) 100.697
Color/Appearance Pale orange solid
Purity ≥99.999%, 5N
Melting Point (°C) 1,457
Theoretical Density (g/cm3) 4.138
Solubility in Water Insoluble
Band Gap (eV) 2.24
Electron Mobility (cm2/(V·s)) 300
Magnetic Susceptibility (χ) (cgs) -13.8×10−6 
Thermal Conductivity (W/(cm·K)) 0.752
Refractive Index (nD)
  • 2.964 (10 µm)
  • 3.209 (775 nm)
  • 3.590 (500 nm)
  • 5.05 (354 nm)

MSE Supplies offers a variety of crucibles for evaporation materials. We can customize the dimensions based on your requirements.

References:

1. Growth conditions and morphological pecularities of gallium phosphide whiskers obtained by thermal evaporation in vacuum. physica status solidi (a) 8, no. 2 (1971): 521-529.

2. Gallium–Phosphide Films Deposited by Sputtering. Journal of Vacuum Science and Technology 7, no. 1 (1970): 110-114.

3. Vapor-phase synthesis of gallium phosphide nanowires. Crystal Growth and Design 9, no. 1 (2009): 525-527.