Silicon/Silicon Dioxide (Si/SiO₂) 300nm Wet Thermal Oxide Silicon Wafer and Substrates, Prime Grade

Thermal oxide (silicon dioxide, SiO₂) layer is formed on silicon wafer surface at an  elevated temperature in the presence of an oxidant. This process is commonly referred to as a thermal oxidation process. The SiO₂  thermal oxide thin film is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. 

Silicon/silicon dioxide (Si/SiO₂) thermal oxide wafers and substrates are widely used for FET substrates, surface microscopy analysis, ellipsometry measurements and X-ray studies. MSE Supplies also offers monolayer graphene film on Si/SiO₂ substrate. (10mm x 10mm, 1 inch x 1 inch, and more...)

We can offer a variety of choices for customization. Please contact us at sales@msesupplies.com for your requirements of customized products. 

MSE Supplies offers the following choices:

• Type of silicon wafer: N or P type 
  
• Silicon wafer doping: un-doped, P-doped or B-doped
• SiO₂ thickness: 300~500 nm. The standard thickness is 300 nm.
  
• Electrical resistivity: un-doped (>1000 Ωcm), P or B doped (10^-3~10⁴ Ωcm)
• Crystal orientations: (100), (111) and (110)
• Substrate sizes: 10x10 mm, 15x15 mm, 2", 3", 4" or customized
• Thickness: 0.3~0.5 mm, 1.0 mm or customized
• Surface polishing: Single Side Polished (SSP) or Double Side Polished (DSP)