Thank you!

Your quote has been successfully submitted!

For products requiring additional information, our team will contact you within 1 business day

Failed

There was an error submitting your quote. Please try again.

Sapphire Substrate - GaN on 2 inch Sapphire Substrate (GaN/Sapphire) | MSE Supplies LLC

Free Shipping on MSE PRO Online Orders of $500 or More! U.S. Orders Only * Offer Excludes Hazmat Shipments *

Menu
Cart

This product has been added to the cart.

MSE PRO AlGaN/GaN HEMT on 2 inch Sapphire Wafer

MSE PRO AlGaN/GaN HEMT on 2 inch Sapphire Wafer

SKU: WA0230

  • $ 62595
  • Save $ 7600

AlGaN/GaN HEMT transistors (high electron mobility transistors) grown on sapphire substrate

Other layer structures can be custom made upon request. Please contact us for a quote.


  • Product SKU# WA0230 for SSP, WA0231 for DSP
  • Substrate: C plane Sapphire (0001), 2 inch diameter sapphire wafer, 430 +/- 25 um thickness
  • Thickness of GaN buffer (um): 2 um
  • AlGaN thickness (nm): 25 nm
  • AlN thickness: 1 nm
  • GaN layer thickness: 300 nm
  • Sheet resistance (ohms/sq): <400
  • Electron mobility (cm2/V-sec): >1500 
  • Carrier concentration (/cm): >8e12
  • Usable Area: >90%
  • Growth method: MOCVD

Related Publications

  1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs B.M. Green; K.K. Chu; E.M. Chumbes; J.A. Smart; J.R. Shealy; L.F. Eastman
  2. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates S.T. Sheppard; K. Doverspike; W.L. Pribble; S.T. Allen; J.W. Palmour; L.T. Kehias; T.J. Jenkins
  3. Trapping effects in GaN and SiC microwave FETs S.C. Binari; P.B. Klein; T.E. Kazior
  4. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs with Integrate Slant Field Plates Y. Dora; A. Chakraborty; L. Mccarthy; S. Keller; S.P. Denbaars; U.K. Mishra
  5. High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates Huili Xing; Y. Dora; A. Chini; S. Heikman; S. Keller; U.K. Mishra
  6. High breakdown GaN HEMT with overlapping gate structure N.-Q. Zhang; S. Keller; G. Parish; S. Heikman; S.P. DenBaars; U.K. Mishra
  7. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs V. Tilak; B. Green; V. Kaper; H. Kim; T. Prunty; J. Smart; J. Shealy; L. Eastman
  8. Measured microwave power performance of AlGaN/GaN MODFET Y.-F. Wu; B.P. Keller; S. Keller; D. Kapolnek; S.P. Denbaars; U.K. Mishra
  9. CW operation of short-channel GAN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz M. Asif Khan; Q. Chen; M.S. Shur; B.T. Dermott; J.A. Higgins; J. Burm; W.J. Schaff; L.F. Eastman
  10. AlN/GaN insulated -Gate HFETs Using Cat-CVD SiN M. Higashiwaki; T. Mimura; T. Matsui
  11. Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate D. Ducatteau; A. Minko; V. Hoel; E. Morvan; E. Delos; B. Grimbert; H. Lahreche; P. Bove; C. Gaquiere; J.C. De Jaeger; S. Delage