4" Silicon/Silicon Dioxide (Si/SiO₂) Dry Thermal Oxide Silicon Wafer, Prime Grade

4" Silicon/Silicon Dioxide (Si/SiO₂) Dry Thermal Oxide Silicon Wafer, Prime Grade

Thermal oxide (silicon dioxide, SiO₂) layer is formed on silicon wafer surface at an  elevated temperature in the presence of an oxidant. This process is commonly referred to as a thermal oxidation process. The SiO₂  thermal oxide thin film is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. 

Silicon/silicon dioxide (Si/SiO₂) thermal oxide wafers and substrates are widely used for FET substrates, surface microscopy analysis, ellipsometry measurements and X-ray studies. MSE Supplies also offers monolayer graphene film on Si/SiO₂ substrate. (10mm x 10mm, 1 inch x 1 inch, and more...)

We can offer a variety of choices for customization. Please contact us for your requirements of customized products. 

Specifications:

• Type of silicon wafer: P type 
  
• Silicon wafer doping: Boron-doped
• SiO₂ thickness: 300nm (+/-10%).
  
• Electrical resistivity: 1-5 ohm-cm
• Crystal orientation: <100>
• Wafer diameter: 100+/-0.3 mm
• Wafer thickness: 525+/-20 um
• Surface polishing: Single Side Polished (SSP)