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6 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating
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6 inch diameter Silicon Carbide (SiC) Wafers Specifications
Both N-Type and Semi-Insulating Type 4H 6 inch SiC wafers are available. Please contact us for the current lead time.
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Grade |
Zero MPD Grade |
Production Grade |
Research Grade |
Dummy Grade |
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Diameter |
150.0 mm +/- 0.2 mm |
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Thickness |
500 um +/- 25 um for 4H-SI 350 um +/- 25 um for 4H-N |
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Wafer Orientation |
On axis: <0001> +/- 0.5 deg for 4H-SI Off axis: 4.0 deg toward <11-20> +/-0.5 deg for 4H-N |
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Micropipe Density (MPD) |
1 cm-2 |
5 cm-2 |
15 cm-2 |
30 cm-2 |
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Electrical Resistivity (Ohm-cm) |
4H-N |
0.015~0.025 |
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4H-SI |
>1E5 |
(90%) >1E5 |
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Doping Concentration |
N-type: ~ 1E18/cm3 SI-type (V-doped): ~ 5E18/cm3 |
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| Primary Flat (N type) | {10-10} +/- 5.0 deg | ||||
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Primary Flat Length (N type) |
47.5 mm +/- 2.0 mm |
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| Notch (Semi-Insulating type) | Notch | ||||
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Edge exclusion |
3 mm |
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TTV /Bow /Warp |
15um /40um /60um |
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Surface Roughness |
CMP Ra 0.5 nm on both sides |
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Cracks by high intensity light |
None |
None |
1 allowed, 2 mm |
Cumulative length 10 mm, single length 2 mm |
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Hex Plates by high intensity light* |
Cumulative area 0.05 % |
Cumulative area 0.05 % |
Cumulative area 0.05 % |
Cumulative area 0.1 % |
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Polytype Areas by high intensity light* |
None |
None |
Cumulative area 2% |
Cumulative area 5% |
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Scratches by high intensity light** |
3 scratches to 1 x wafer diameter cumulative length |
3 scratches to 1 x wafer diameter cumulative length |
5 scratches to 1 x wafer diameter cumulative length |
5 scratches to 1 x wafer diameter cumulative length |
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Edge chip |
None |
3 allowed, 0.5 mm each |
5 allowed, 1 mm each |
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Contamination by high intensity light |
None |
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Notes:
* Defect limits are applicable to the entire wafer surface except for the edge exclusion area, where defects are present.
** The scratches are checked on the Si face only.
Inside the wafer case, the side with laser marking of the serial number is the Carbon face. The Si face is facing down and the Carbon face is facing up.
PROPERTIES OF 4H SILICON CARBIDE CRYSTAL MATERIAL
|
Property |
4H-SiC Single Crystal |
|
Lattice Parameters (Å) |
a=3.076 c=10.053 |
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Stacking Sequence |
ABCB |
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Density |
3.21 |
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Mohs Hardness |
~9.2 |
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Thermal Expansion Coefficient (CTE) (/K) |
4-5 x 10-6 |
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Refraction Index @750nm |
no = 2.61 ne = 2.66 |
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Dielectric Constant |
c ~ 9.66 |
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Doping Type |
N-type or Semi-insulating |
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Thermal Conductivity (W/cm-K @298K) (N-type, 0.02 ohm-cm) |
a~4.2 c~3.7 |
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Thermal Conductivity (W/cm-K @298K) (Semi-insulating type) |
a~4.9 c~3.9
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Band-gap (eV) |
3.23 |
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Break-Down Electrical Field (V/cm) |
3-5 x 106 |
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Saturation Drift Velocity (m/s) |
2.0 x 105 |
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Wafer and Substrate Sizes |
Wafers: 2, 4, 6, 8 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request |
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Product Grades |
A Grade Zero micropipe density (MPD < 1 cm-2) B Grade Production grade (MPD < 5 cm-2) C Grade Research grade (MPD < 15 cm-2) D Grade Dummy grade (MPD < 30 cm-2) |
Price
MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to six (6) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.
Customization
Customized SiC crystal products can be made to meet customer's particular requirements and specifications.