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8 inch Silicon Carbide Wafers 4H-SiC N-Type– MSE Supplies LLC

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8 inch Silicon Carbide Wafers 4H-SiC N-Type - MSE Supplies LLC

8 inch Silicon Carbide Wafers 4H-SiC N-Type

SKU: WA0388

  • $ 3,95000
  • Save $ 43900

8 inch diameter Silicon Carbide (SiC) Wafers Specifications

Grade

Zero MPD Grade

Dummy Grade

Diameter

199.5-200 mm

Thickness

500 um +/- 25 um

350 um +/- 25 um

Wafer Orientation

Off axis: 4.0 deg toward <11-20> +/-0.5 deg

Micropipe Density (MPD)

 <0.5 cm-2

<30 cm-2

TTV /Bow /Warp

 <10um /±35um /<70um

<15um /±50um /<100um

Electrical Resistivity

(Ohm-cm)

0.015~0.028
Notch {10-10} +/- 5.0 deg

Edge exclusion

3 mm

Surface Roughness

Optical Polish Ra 1 nm

CMP Ra 0.5 nm on the Si face

Cracks by high intensity light

 None

Cumulative length 30 mm, single length 2 mm

Hex Plates by high intensity light*

 Cumulative area 0.05 %

Cumulative area 0.1 %

Polytype Areas by high intensity light*

 None

Cumulative area 3%

Scratches by high intensity light**

 None

5 scratches to 1 x wafer diameter cumulative length

Edge chip

 None permitted >0.2mm width and depth

9 allowed, 1 mm each

Contamination by high intensity light

None

Notes:

* Defect limits are applicable to the entire wafer surface except for the edge exclusion area, where defects are present.

** The scratches are checked on the Si face only.

Inside the wafer case, the side with laser marking of the serial number is the Carbon face. The Si face is facing down and the Carbon face is facing up. 

The wafer will be available at the end of June. 

PROPERTIES OF 4H SILICON CARBIDE CRYSTAL MATERIAL

Property

4H-SiC Single Crystal

Lattice Parameters (Å)

a=3.076

c=10.053

Stacking Sequence

ABCB

Density

3.21

Mohs Hardness

~9.2

Thermal Expansion Coefficient (CTE) (/K)

4-5 x 10-6

Refraction Index @750nm

no = 2.61

ne = 2.66

Dielectric Constant

c ~ 9.66

Doping Type

N-type or Semi-insulating

Thermal Conductivity (W/cm-K @298K)

(N-type, 0.02 ohm-cm)

a~4.2

c~3.7

Thermal Conductivity (W/cm-K @298K)

(Semi-insulating type)

a~4.9

c~3.9

 

Band-gap (eV)

3.23

Break-Down Electrical Field (V/cm)

3-5 x 106

Saturation Drift Velocity (m/s)

2.0 x 105

Wafer and Substrate Sizes

Wafers: 2, 4, 6, 8 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request

 

Price

MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to six (6) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.

Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications.