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MSE PRO (001) Beta Gallium Oxide Homoepitaxial Wafer (Ga2O3-on-Ga2O3), N-typeā€“ MSE Supplies LLC

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MSE PRO (001) Beta Gallium Oxide Homoepitaxial Wafer (Ga<sub>2</sub>O<sub>3</sub>-on-Ga<sub>2</sub>O<sub>3</sub>), N-type - MSE Supplies LLC

MSE PRO (001) Beta Gallium Oxide Homoepitaxial Wafer (Ga2O3-on-Ga2O3), N-type

SKU: WA0531

  • $ 4,40195
  • Save $ 52823

MSE PROā„¢ (001) Beta Gallium Oxide Homoepitaxial Wafer, Ga2O3-on-Ga2O3, N-type

MSE Supplies offers various sizes of ĆŸ-Ga2O3 homoepitaxial wafer. It is a thin layer of gallium oxide crystal on top of the same material. It has excellent electrical and material properties including high breakdown voltage, wide bandgap, and low on resistance. It is widely used in high-performance power electronics devices for electrical vehicles, sensors, photodetectors, etc.

Specification:

      General Wafer
      Diameter 15 mm x 10 mm (WA0531) ; 50.8 mm  (WA0532)
      Thickness 500 Ā± 20 Ī¼m  (WA0531) ; 650 Ā± 30 (WA0532)
      XRD FWHM
      		 ā‰¤ 150 arcsec
      Surface Roughness RMS ā‰¤ 3 nm (10 Ī¼m Ɨ 10 Ī¼m)
      Epi Layer
      Material Ɵ-Ga2O3
      Thickness 250 Ā± 50 nm
      Uniformity
      		 ā‰¦ 10%
      Doping
      		 UID
      Substrate
      Material Ɵ-Ga2O3
      Type/Dopant N-type / Sn-doped
      Orientation (001) Ā± 1Ā°
      Nd-Na 1E18 - 2E19 cm-3

        Please contact us for bulk order or customized shape, size, thickness and substrate. 

        References:

        1. Recent progress in the growth of Ī²-Ga2O3 for power electronics applications. Materials Science in Semiconductor Processing 78 (2018): 132-146.

        2. Growth and characterization of homoepitaxial Ī²-Ga2O3 layers. Journal of Physics D: Applied Physics 53, no. 48 (2020): 484002.