MSE PRO 10x10 mm AlGaN/GaN HEMT on Si Wafer (GaN/Si)

10x10 mm AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate

HEMT structure for 650 V power electronics applications

Special layer structures can be custom made upon request. Please contact us for a quote. D-mode HEMT, E-mode HEMT, RF HEMT wafers are available upon request.

• Product SKU#: WA0249
• Thickness of GaN cap layer: 3 nm
• AlGaN composition: 26% Al, 74% GaN
• AlGaN barrier layer thickness: 25 nm
• AlN inter-layer thickness: 1 nm
• Thickness of GaN layer: 2 um
• Thickness of buffer layer: ~ 1 um
• Thickness of Si (111) substrate: 1000 um 
• Sheet resistance (Ohms per square): < 420
• Electron mobility: > 1300 cm²/V-sec for Si substrate
• Sheet carrier concentration (/cm): ~ 1E13
• Breakdown voltage: > 1000 V
• Bow: < 60 um
• RMS roughness (AFM): < 0.5 nm (5 um x 5 um area)
  
• 2 um GaN layer Resistivity: > 1E5 Ohm.cm

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