MSE PRO 2 inch Aluminum Scandium Nitride AlScN Template on Sapphire (0001)

MSE PRO™ 2 inch Aluminum Scandium Nitride AlScN Template on Sapphire (0001)

• Product SKU#: WA0271
• Substrate Thickness: Sapphire, 430 +/- 25 µm 
• Substrate Structure: Sapphire (0001), C-plane
• Diameter: 50.8 mm +/- 0.1 mm
• Thickness of AlScN layer: 800 nm
• Sc Concentration: 40 at% +/- 5 at%
• Usable Area: > 90%
• Orientation: C plane (0001) +/- 1 degree
• Total Thickness Variation (TTV): ≤ 15 µm
• Bow/Warp: ≤ 25 µm
• Crystallinity: XRD FWHM of (0002) ≤ 200 arcsec
• Surface Roughness: Ra ≤ 10 nm (5 µm x 5 µm area)
• Polishing: Single side polished (SSP) is standard. Double-side polished (DSP) is available upon request.
• Package: single wafer containers

Aluminum scandium nitride (AlScN) on sapphire refers to the deposition of a thin AlScN film on a sapphire substrate. This process involves growing a layer of AlScN material on the surface of a sapphire wafer using techniques such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). Aluminum scandium nitride (AlScN) is a a wide-band gap semiconductor material composed of aluminum (Al), scandium (Sc), and nitrogen (N). Due to its excellent piezoelectric and acoustic properties, it is an ideal material for high-frequency acoustic devices. It is considered as the most promising substrate for 5G radio frequency SAW/BAW filters.

Note:
1. The crystalline quality may not be as good as indicated by XRD when tested using other methods.
2. Apart from the AlScN layer, there is an AlN buffer layer.

References: 

1. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire. Applied physics letters 108, no. 23 (2016): 231601

2. Properties of Sc x Al 1-x N (x= 0.27) thin films on sapphire and silicon substrates upon high temperature loading. Microsystem Technologies 22 (2016): 1679-1689