MSE PRO 3C-N Type Silicon Carbide (3C-SiC) Square Substrate, Dummy Grade
SKU: WA0382
MSE PRO™ 3C-N Type Silicon Carbide (3C-SiC) Square Substrate, Dummy Grade
MSE Supplies offers 3C-N Type Silicon Carbide SiC (3C-SiC) Substrates. It has a crystal structure of silicon carbide where the silicon and carbon atoms are arranged in a cubic lattice with diamond-like structure. It has several superior properties than the widely used 4H-SiC, such as higher electron mobility and saturation velocity. The performance of 3C-SiC power devices is expected to be better, cheaper, and easier to manufacture than the currently mainstream 4H-SiC wafer. It is exceptionally suitable for power electronic devices.
Specification:
Grade | Dummy Grade | |
Size |
10mmx10mm+/-0.2mm 5mmx5mm+/- 0.2mm |
|
Thickness | 350 um +/- 25 um | |
Wafer Orientation | On axis: <111> +/-0.5 deg | |
Polytype | 3C | |
Micropipe Density (MPD) | <0.5 cm-2 | |
Electrical Resistivity | ≤0.0008 Ohm.cm | |
TTV | ≤5um | |
Bow | ≤15um | |
Warp | ≤30um | |
Roughness | C face polish Ra≤1nm | |
Si face CMP Ra≤0.2nm |
* Please contact us if you need more detailed specification.
**For production grade, please contact us for availability.
PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS
Property |
4H-SiC Single Crystal |
3C-SiC Single Crystal |
Lattice Parameters (Å) |
a=3.082 c=10.092 |
a=4.35 |
Stacking Sequence | ABCB | ABC |
Density (g/cm³) |
3.23 |
2.36 |
Mohs Hardness |
~9.2 |
~9.2 |
Thermal Expansion Coefficient (CTE) (/K) |
4-5 x 10-6 |
3-4 x10-6 |
Dielectric Constant |
c ~ 9.66 |
c ~ 9.72 |
Doping Type |
N-type or Semi-insulating or P-type |
N-type |
Band-gap (eV) |
3.26 |
2.4 |
Saturation Drift Velocity (m/s) |
2.0 x 105 |
2.7 x 105 |
Wafer and Substrate Sizes |
Wafers: 2, 4, 6 inch; smaller substrates: 5x5, 10x10mm, other sizes are available and can be custom-made upon request |
Customization
Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.