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MSE PRO 4 inch Aluminum-Silicon-Copper (Al-Si-Cu) Thin Film on Silicon– MSE Supplies LLC

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MSE PRO 4 inch Aluminum-Silicon-Copper (Al-Si-Cu) Thin Film on Silicon Wafer - MSE Supplies LLC

MSE PRO 4 inch Aluminum-Silicon-Copper (Al-Si-Cu) Thin Film on Silicon Wafer

SKU: WA5344

  • $ 26995
  • Save $ 2905



MSE PRO™ 4 inch Aluminum-Silicon-Copper (Al-Si-Cu) Thin Film on Silicon Wafer

The Aluminum-Silicon-Copper (Al-Si-Cu) thin films are commonly used as interconnects in integrated circuits (ICs) and microelectronic devices. The use of Al-Cu-Si thin films on silicon substrates contributes to the development of high-performance semiconductor devices with enhanced electrical and structural properties.

Specifications:

Size 4 inch
Substrate Silicon wafer
Substrate Thickness 775 um +/- 25um
Substrate Doping Type P-type/ Boron-doped
Substrate Orientation <100>
Substrate Resistivity 1-100 ohm-cm
Deposition Method PVD
Substrate Surface
Single Side Polished
Thin Film Material Aluminum-Silicon-Copper (Al-Si-Cu)
Thin Film Thickness 50 nm - 1500 nm customizable

Reference:

[1] Masayuki Fujii, Takahiro Namazu, Hiroki Fujii, Kei Masunishi, Yasushi Tomizawa, Shozo Inoue; Quasistatic and dynamic mechanical properties of Al–Si–Cu structural films in uniaxial tension. J. Vac. Sci. Technol. B 1 May 2012; 30 (3): 031804.

[2] Witvrouw A, Proost J, Roussel Ph, Cosemans P, Maex K. Stress Relaxation in Al–Cu and Al–Si–Cu Thin Films. Journal of Materials Research. 1999;14(4):1246-1254.