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MSE PRO 4 Inch MgO Doped LiNbO3 Thin Film on Insulator Wafers (MGLNOI)– MSE Supplies LLC

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MSE PRO 4 Inch MgO Doped Lithium Niobate Thin Film on Insulator Wafers (MGLNOI) X-Cut

MSE PRO 4 Inch MgO Doped Lithium Niobate Thin Film on Insulator Wafers (MGLNOI) X-Cut

SKU: WA4011

  • $ 5,28995
  • Save $ 58005

MSE PRO™ 4 Inch MgO Doped Lithium Niobate Thin Film on Insulator Wafers (MGLNOI), X-Cut

MSE Supplies offers MgO Doped Lithium Niobate (LiNbO3) Thin Film (MGLNOI) on Insulator wafer. LNOI wafer consists of an insulating substrate with lithium niobate layer deposited on it. Lithium niobate is a versatile material with high nonlinearities and unique optical and electro-optical properties, which is widely used in photonics related applications, including modulators and many other optical communication devices. Magnesium oxide (MgO) doping improves the material properties by reducing the coercive field (Ec) required for poling from 21 to 4 V/µm, as well as the sensitivity to green-induced infrared absorption (GRIIRA) and photorefractive damage. The insulating substrate provides a stable platform and reduces surface recombination, which makes it a better material than bulk lithium niobate in many ways, including smaller size and footprint (suitable for integration of miniaturized electronic devices), lower propagation loss (more efficient), higher mechanical stability and resistance to environment, etc. It is now investigated as a promising material for the development of next-generation electronic and photonic devices.

Applications:

  • Non-linear Optics
  • Electro–optics Modulators
  • Ferroelectric Memory Devices
  • Others

Specification:

      General Wafer
      Structure MgO-LiNbO3/ Oxide / Si
      Diameter Φ100 ± 0.2 mm
      Thickness 525 ± 25 μm
      Primary Flat Length 32.5 ± 2 mm
      Wafer Beveling R Type
      TTV < 5 μm
      LTV < 1.5 μm (5∗5 mm2) / 100%
      Bow  ± 50 μm
      Warp < 50 μm
      Edge Trimming 2 ± 0.5 mm
      Lithium Niobate Layer
      Average Thickness

      300 nm (WA4011) 

      Other thicknesses are available upon request
      Orientation X axis ± 0.5° 
      Primary Flat Orientation Z axis ± 1° 
      Doping MgO (5mol%)
      Front Surface Roughness (Ra) < 1 nm
      Bond Defects > 1 mm None ; ≦ 1 mm within 80 total
      Front Surface Scratch

      > 1 cm None ; ≦ 1 cm within 3 total
      Oxide Layer
      Thickness 4700 ± 150 nm
      Uniformity ± 5%
      Substrate
      Material Si
      Orientation <100> ± 1°
      Primary Flat Orientation <110> ± 1°
      Resistivity > 10 kΩ·cm
      Backside Etched-Oxide

        Please contact us for bulk order or customized shape, size, thickness and substrate. 

        References:

        1. Integrated photonics on thin-film lithium niobate. Advances in Optics and Photonics, 13(2), 242-352.

        2. Grating coupler on lithium niobate thin film waveguide with a metal bottom reflector. Optical Materials Express, 7(11), 4010-4017.

        3. Waveguides in single-crystal lithium niobate thin film by proton exchange. Optics Express, 23(2), 1240-1248.

        4. Ultrafast tunable lasers using lithium niobate integrated photonics. Nature, 615(7952), 411-417.

        5. Jonathan Tyler Nagy and Ronald M. Reano, "Reducing leakage current during periodic poling of ion-sliced x-cut MgO doped lithium niobate thin films," Opt. Mater. Express 9, 3146-3155 (2019).