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MSE PRO 4 inch Tantalum Nitride (TaN) Thin Film on Silicon Wafer– MSE Supplies LLC

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MSE PRO 4 inch Tantalum Nitride (TaN) Thin Film on Silicon Wafer

MSE PRO 4 inch Tantalum Nitride (TaN) Thin Film on Silicon Wafer

SKU: WA5307

  • $ 26995
  • Save $ 3300



MSE PRO™ 4 inch Tantalum Nitride Thin Film on Silicon Wafer

Tantalum (Ta) and Tantalum nitride (TaN) have been extensively used for microelectronic industry, as diffusion barriers and thin film resistors. Both materials have potential as coatings for tribological and corrosion resistance applications. TaN is very well known for its high wear resistance, high hardness and remarkable corrosion resistance. It has been used as protective coating in industry and also as diffusion barrier.

Specifications:

Size 4 inch
Substrate Silicon wafer
Substrate Thickness 775 um +/- 25um
Substrate Doping Type P-type/ Boron-doped
Substrate Orientation <100>
Substrate Resistivity 1-100 ohm-cm
Deposition Method PVD
Substrate Surface
Single Side Polished
Thin Film Material Tantalum Nitride (TaN)
Thin Film Thickness 50 nm - 300nm customizable

Reference:

[1] A. Jara, B. Fraisse, V. Flaud, N. Fréty, G. Gonzalez, Thin film deposition of Ta, TaN and Ta/TaN bi-layer on Ti and SS316-LVM substrates by RF sputtering, Surface and Coatings Technology, Volume 309, 2017, Pages 887-896.

[2] S. M. Rossnagel; Characteristics of ultrathin Ta and TaN films. J. Vac. Sci. Technol. B 1 November 2002; 20 (6): 2328–2336.