MSE PRO 4 inch Tantalum Nitride (TaN) Thin Film on Silicon Wafer
SKU: WA5307
MSE PRO™ 4 inch Tantalum Nitride Thin Film on Silicon Wafer
Tantalum (Ta) and Tantalum nitride (TaN) have been extensively used for microelectronic industry, as diffusion barriers and thin film resistors. Both materials have potential as coatings for tribological and corrosion resistance applications. TaN is very well known for its high wear resistance, high hardness and remarkable corrosion resistance. It has been used as protective coating in industry and also as diffusion barrier.
Specifications:
Size | 4 inch |
Substrate | Silicon wafer |
Substrate Thickness | 775 um +/- 25um |
Substrate Doping Type | P-type/ Boron-doped |
Substrate Orientation | <100> |
Substrate Resistivity | 1-100 ohm-cm |
Deposition Method | PVD |
Substrate Surface |
Single Side Polished |
Thin Film Material | Tantalum Nitride (TaN) |
Thin Film Thickness | 50 nm - 300nm customizable |
Reference:
[2] S. M. Rossnagel; Characteristics of ultrathin Ta and TaN films. J. Vac. Sci. Technol. B 1 November 2002; 20 (6): 2328–2336.