MSE PRO 4 inch Tantalum (Ta) Thin Film on Silicon Wafer
SKU: WA5304
MSE PRO™ 4 inch Tantalum Thin Film on Silicon Wafer
Tantalum (Ta) and Tantalum nitride (TaN) have been extensively used for microelectronic industry, as diffusion barriers and thin film resistors. Both materials have potential as coatings for tribological and corrosion resistance applications. Ta is well known by its excellent thermal stability and high conductivity. It has been used as a biomaterial for a long time due to its excellent biocompatibility, corrosion resistance and stability.
Specification:
Size | 4 inch |
Substrate | Silicon wafer |
Substrate Thickness | 775 um +/- 25um |
Substrate Doping Type | P-type/ Boron-doped |
Substrate Orientation | <100> |
Substrate Resistivity | 1-100 ohm-cm |
Deposition Method | PVD |
Defect | <100 pcs @ >200nm |
Substrate Surface |
Single side polished |
Thin Film Material | Tantalum (Ta) |
Thin Film Thickness | 50 nm - 300nm customizable |
Reference:
[2] S. M. Rossnagel; Characteristics of ultrathin Ta and TaN films. J. Vac. Sci. Technol. B 1 November 2002; 20 (6): 2328–2336.