MSE PRO 4 inch Titanium Tungsten (TiW) Thin Film on Silicon Wafer
SKU: WA5316
MSE PRO™ 4 inch Titanium Tungsten (TiW) Thin Film on Silicon Wafer
The addition of titanium to tungsten improves its corrosion resistance and adhesive strength for interconnect metal bonds, making it an attractive material for electronic applications. Additionally, titanium enhances the diffusion barrier performance due to its high affinity for nitrogen and oxygen, and the thermal and electrical conductivity of TiW alloys is also impressive.
Specifications:
Size | 4 inch |
Substrate | Silicon wafer |
Substrate Thickness | 775 um +/- 25um |
Substrate Doping Type | P-type/ Boron-doped |
Substrate Orientation | <100> |
Substrate Resistivity | 1-100 ohm-cm |
Deposition Method | PVD |
Substrate Surface |
Single Side Polished |
Thin Film Material | Titanium Tungsten (TiW) |
Thin Film Thickness | 50 nm - 300nm customizable |
Reference:
[2] F. Saghaeian, J. Keckes, S. Woehlert, M. Rosenthal, M. Reisinger, J. Todt,
Microstructure and stress gradients in TiW thin films characterized by 40 nm X-ray diffraction and transmission electron microscopy, Thin Solid Films, Volume 691, 2019, 137576.