MSE PRO 4 inch Tungsten (W) Thin Film on Silicon Wafer

MSE PRO™ 4 inch Tungsten (W) Thin Film on Silicon Wafer

Tungsten (W) and W-based alloyed thin films have numerous advantages, including a high melting temperature, excellent mechanical strength, and effective metal barrier capabilities. They have potential uses in X-ray technology as absorbing layers and mirrors, as well as in semiconductor interconnect layers for preventing diffusion.

Specifications:

Reference:

[1] Soo Jung Lee, Tae Hyung Kim, Byeong-Hwa Jeong, Kyong Nam Kim, Geun Young Yeom, Properties of tungsten thin film deposited using inductively coupled plasma assisted sputtering for next-generation interconnect metal, Thin Solid Films, Volume 674, 2019, Pages 64-70.

[2] H.L. Sun, Z.X. Song, D.G. Guo, F. Ma, K.W. Xu, Microstructure and Mechanical Properties of Nanocrystalline Tungsten Thin Films, Journal of Materials Science & Technology, Volume 26, Issue 1, 2010, Pages 87-92.