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MSE PRO 4 inch Undoped (UID) Gallium Nitride Single Crystal– MSE Supplies LLC

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Laser Diode Grade 2 inch Fe-doped Semi-insulating Gallium Nitride Single Crystal C plane (0001),  MSE Supplies

MSE PRO 4 inch Undoped (UID) Gallium Nitride Single Crystal

SKU: WA0278

  • $ 3,95095
  • Save $ 47500



 

MSE PRO™ 4 inch Undoped (UID) Gallium Nitride Single Crystal

MSE Supplies offers high quality Production Grade 4 inch UID Gallium Nitride Single Crystal. Customers from all over the world have trusted MSE Supplies as their preferred supplier of GaN crystal substrates. These GaN free standing is widely used for laser diodes, power electronics, RF devices, etc.

Specification:
SKU# WA0278 WA0279 WA0280
Grade Production Grade Research Grade Dummy Grade
Diameter 100 ± 0.3 mm
Thickness 450 ± 30 um
Conductivity Type UID
Dopant undoped
Wafer Orientation Orientation: C-plane (0001) off angle toward M-axis 0.5 deg ± 0.15 deg
FWHM (002) < 80 arcsec
FWHM (102) < 80 arcsec
Electrical Resistivity (300K) < 0.2 Ohm-cm
Usable area ≥ 90 % ≥80 % ≥ 70 %
Primary Flat Orientation  M-plane (10-10) ± 2 deg
Primary Flat Length 32 ± 1 mm
Secondary Flat Orientation Ga face, 90° clockwise from primary flat orientation flat plane
Secondary Flat Length 18 ± 1 mm
TTV  ≤ 30 um
Bow  ± 30 um
Edge bevel Beveled
Polishing Double sides polished, Front surface: Ra < 0.5 nm;
Single side polished available upon request
Package packaged in a class 100 clean room environment, in single wafer container