Thank you!

Your quote has been successfully submitted!

For products requiring additional information, our team will contact you within 1 business day

Failed

There was an error submitting your quote. Please try again.

MSE PRO AlGaN/GaN HEMT on 6 inch Si Wafer GaN/Si (D-mode)– MSE Supplies LLC

Overstock Sale - Select Products 10% Off on Orders of $500 or More! Promo Code:

SAVING10

Shop Now
Menu
Cart

This product has been added to the cart.

MSE PRO 10 pcs of 2 inch Diameter 25 Wafers Carrier Box, Polypropylene, Cleanroom Class 100 Grade - MSE Supplies LLC

MSE PRO AlGaN/GaN HEMT on 6 inch Si Wafer GaN/Si (D-mode)

SKU: WA0301

  • $ 1,70995
  • Save $ 19560

MSE PRO™ GaN HEMT on 6 inch Si Wafer GaN/Si (D-mode)

Other layer structures can be custom made upon request. Please contact us for a quote.

SKU

WA0301

Substrate thickness

1000 ± 25 µm

Total epitaxial thickness

5.0 ± 1.0 µm

Barrier layer material Al% composition

20% ± 5%

Barrier layer thickness

20 ± 5 nm

XRD Rocking Curve

（002）≤700 arcsec

（102）≤980 arcsec

Rsh

≤400  Ω/sq

Cap

Uid-GaN, ~2-3nm

Carrier concentration

≥0.8×1013 cm-2

Carrier Mobility

≥1700 cm2V -1s -1

rms

≤2.0 nm

TTV

≤5 μm

Bow，Wrap

≤40 μm

Growth Method

MOCVD

Related Publications

  1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs B.M. Green; K.K. Chu; E.M. Chumbes; J.A. Smart; J.R. Shealy; L.F. Eastman
  2. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates S.T. Sheppard; K. Doverspike; W.L. Pribble; S.T. Allen; J.W. Palmour; L.T. Kehias; T.J. Jenkins
  3. Trapping effects in GaN and SiC microwave FETs S.C. Binari; P.B. Klein; T.E. Kazior
  4. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs with Integrate Slant Field Plates Y. Dora; A. Chakraborty; L. Mccarthy; S. Keller; S.P. Denbaars; U.K. Mishra
  5. High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates Huili Xing; Y. Dora; A. Chini; S. Heikman; S. Keller; U.K. Mishra
  6. High breakdown GaN HEMT with overlapping gate structure N.-Q. Zhang; S. Keller; G. Parish; S. Heikman; S.P. DenBaars; U.K. Mishra
  7. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs V. Tilak; B. Green; V. Kaper; H. Kim; T. Prunty; J. Smart; J. Shealy; L. Eastman
  8. Measured microwave power performance of AlGaN/GaN MODFET Y.-F. Wu; B.P. Keller; S. Keller; D. Kapolnek; S.P. Denbaars; U.K. Mishra
  9. CW operation of short-channel GAN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz M. Asif Khan; Q. Chen; M.S. Shur; B.T. Dermott; J.A. Higgins; J. Burm; W.J. Schaff; L.F. Eastman
  10. AlN/GaN insulated -Gate HFETs Using Cat-CVD SiN M. Higashiwaki; T. Mimura; T. Matsui
  11. Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate D. Ducatteau; A. Minko; V. Hoel; E. Morvan; E. Delos; B. Grimbert; H. Lahreche; P. Bove; C. Gaquiere; J.C. De Jaeger; S. Delage