MSE PRO Ga₂O₃ Beta Gallium Oxide Wafer and Crystal Substrates Semi-insulating Type

Ga₂O₃, Beta Gallium Oxide Wafer and Crystal Substrates, semi-insulating type, prime grade

Product SKU#: WA0502 (1 inch diameter), WA0501 (5 mm x 5 mm)

Specifications:

Crystal structure: Monoclinic

Lattice parameter:

a = 12.225

b = 3.040

c = 5.809

Melt point (°C): 1725°C

Density: 5.95 g/cm³

Dielectric constants: 10

Band Gap: 4.8 - 4.9 eV

Conductivity: Semi-insulating, Fe-doped

Electrical Resistivity: >1E6 Ohm-cm

Electron Mobility: >100 cm²/V-s

Breakdown Voltage (V/cm): 8 MV/cm

Available Size: diameter 25.4 +/- 1 mm (1 inch diameter standard), 5 mm x 5 mm. Special sizes (smaller than 1 inch diameter) are available upon request.

Grade: Prime grade

Edge Exclusion Area: 1 mm

Thickness: 450 +/- 50 um

Polishing: Epi-ready, RMS < 0.5 nm on Ga face, optical polish on O face

Crystal Orientation: (010) with off cut of 1~2° +/- 0.5°

Typical XRD peak width of (020): < 100 arcsec

Packaging: Packing in class 1000 clean room with class 100 grade plastic bag

Beta gallium oxide (ß-Ga₂O₃) is a wide bandgap semiconductor material, and it has been used for deep ultraviolet (UV) photodetectors and high speed & high power electronics. Its wide bandgap of 4.8 - 4.9 eV, high breakdown field of 8 MV/cm, high dielectric constant and good electron mobilities can be translated into a high voltage Baliga figure of merit (HV-BFOM) that is > 3000 times greater than that of Si, > 8 times greater than that of 4H-SiC, and > 4 times that of GaN. In addition, its high frequency Baliga figure of merit is ~150 times that of Si, ~3 times that of 4H-SiC, and 50% greater than that of GaN.

Useful References:

Gallium oxide (Ga₂O₃) metal-semiconductor field-effect transistors on single-crystal Ga₂O₃ (010) substrates

Gallium oxide as host material for multicolor emitting phosphors

Development of gallium oxide power devices