MSE PRO Laser Diode Grade 2 inch Fe-doped Semi-insulating Gallium Nitride Single Crystal C plane (0001)

• Dimension: 2 inch, or 50.8 mm
• Thickness: 350 +/- 25 um
• Usable area: >90%
• Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.35 deg+/- 0.15 deg
• Total Thickness Variation: <15 um
• Bow: <20 um
• Resistivity (300K): > 10^6 Ohm-cm
• Fe-doping concentration: ~ 3 × 10¹⁸ cm⁻³
• Dislocation Density: < 9 x 10⁵ cm^-2
  
• Polishing: Front surface: Ra <0.5 nm, epi-ready, double side polished available per request
• Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.

Related Reference

1. Blue InGaN/GaN laser diodes grown on (33) free-standing GaN substrates

https://doi.org/10.1002/pssc.201001012

2.Review: InGaN-BASED LASER DIODES