MSE PRO Monolayer Hexagonal Boron Nitride Film (hBN) on SiO₂/Si Substrate

MSE PRO™ Monolayer Hexagonal Boron Nitride Film (hBN) on SiO₂/Si Substrate

Hexagonal boron nitride (h-BN), which is also called “white graphene”, has gained special attention for its various outstanding properties including high thermal conductivity, a low dielectric constant, chemical inertness and high mechanical strength. Monolayer hexagonal boron nitride (h-BN), a honeycomb lattice with strong ionic bonding of boron and nitrogen atoms, is the thinnest insulating nanomaterial with an electrical band gap of 5.9 eV. It has a wide range of applications from protective coating, thermal interface material, transparent membrane and deep UV optoelectronic devices. Furthermore, due to its very small lattice mismatch (~2%) with graphene, atomic-scale smoothness and free of dangling bonds, the h-BN has been regarded as the perfect substrate for graphene device applications. 

• Substrate: SiO₂/Si
• Shape: Rectangle
• Size: 1"x1" (SKU# ME0650), 1"x2" (SKU# ME0651) and 2"x2" (SKU# ME0652)
• Grain Size :> 4um
• Coverage : 100%
• SiO₂ Thickness : 300nm
• Si Thickness: 500um

References:

1. Monolayer hexagonal boron nitride films with large domain size and clean interface for enhancing the mobility of graphene‐based field‐effect transistors. Advanced materials 26, no. 10 (2014): 1559-1564.

2. Direct band-gap crossover in epitaxial monolayer boron nitride. Nature communications 10, no. 1 (2019): 1-7.

3. High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion. Science advances 5, no. 6 (2019): eaav0129.

4.Single crystalline film of hexagonal boron nitride atomic monolayer by controlling nucleation seeds and domains. Scientific reports 5, no. 1 (2015): 1-8.