MSE PRO SiO₂ Silica Quartz Single Crystal Wafers and Substrates

Typical Material Properties

Purity

Optical grade: 99.99%

Crystal Structure and lattice parameters

Hexagonal

a= 4.914 Å

c = 5.405 Å

Growth Method

Hydrothermal method

Hardness

7.0 Mohs

Density

2.684 g/cm³

Melt Point

1610 deg C (phase transition point: 573.1 °C)

Specific heat

0.18 cal/g

Thermoelectric Constant

1200 mV / °C @ 300 °C

Thermal conductivity

0.0033 cal/cm/ °C

Thermal expansion coefficient, (CTE) (x10^-6/ K)

perpendicular to Z axis: 13.71

parallel to Z axis: 7.48

Refractive Index

1.544

Q value

Acoustic velocity, SAW Frequency constant, BAW Piezoelectric coupling ,

1.8 x 10^6 minimum

3160 ( m/sec ) 1661 ( kHz/mm )

K2 (%) BAW: 0.65 SAW: 0.14

Inclusion

IEC Grade II

Standard Quartz Wafer Specifications

Quartz Crystal Orientation

Y, X, Z, AT or ST cut. The cut angle can be rotated to any value in the in the range of 30 deg  ~ 42.75 deg upon request.

Primary flat: orientation specified by customer Secondary Flat: orientation specified by customer.

Seed: located in the center with width < 5mm and height > 66mm

Polished surface

Epi-ready polished on one side or two sides to Ra < 1 nm

Working Area: Wafer diameter minus 3 mm (edge exclusion)

BOW: < 20 um for 3" wafer and 30 um for 4" wafer

No chips out on the working area. At the edge, chip width < 0.5 mm

Pits and scratches: < 3 per wafer or < 20 per 100 wafers

Standard Thickness

0.5 mm +/- 0.05 mm TTV < 5 µm

Standard Diameter

dia. 2 inch (50.8mm ) diam. 3 inch (76.2mm) dia. 4 inch (100mm) +/-0.2 mm

Primary Flat: 22 +/- 1.5 mm (dia. 3¨ ) 32 +/- 3.0 mm ( dia. 4¨ )

Secondary Flat: 10 mm +/-1.5 mm

Production Capacity

>1,000 wafers per month