Gallium Nitride (GaN) substrates market to cross $4 billion USD by 2020: It's Applications and Market

The gallium nitride (GaN) substrates market is set to cross $4 billion USD by 2020, according to the market research report “Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on sapphire, GaN on Si, GaN on SiC, GaN on GaN); By Products (Blu-ray Disc (BD), LEDs, UV LEDs) By Industry (Consumer Electronics, Telecom, Industrial, Power, Solar, Wind)-Forecast(2015-2020)”, published by IndustryARC.

Gallium Nitride (GaN) is a semiconductor compound material which has proved to be advantageous in comparison to the other conventional materials such as Silicon, Silicon Carbide, Aluminum, and so on. GaN substrates are essential materials which are deployed across blue-violet laser diodes in recorders or BD players and the power control elements. GaN materials are also used across optoelectronic products such as lasers, LEDs, Power Electronics and Radio Frequency amplifiers.

MSE Supplies is a leading global supplier of GaN single crystal substrates with low dislocation density and uniform surface quality.  

The Gallium Nitride (GaN) substrates market can be segmented based on Size, Type, Product, End-User Industry, Substrate Production Process Type, Node and Geographic Regions. The market based on the sizes of GaN substrates includes 2-inch, 4-inch, 6-inch and others. There are four types of substrates, namely, GaN on Sapphire, GaN on Si, GaN on SiC and GaN on GaN. Lasers, Power switching Devices, Radio Frequency Amplifiers, LEDs and UV LEDs are the various kinds of products where GaN substrates are used. Finally, the market is studied across end-use industries such as Healthcare, Automotive, Military and Communication, General Lighting, Consumer Electronics, Power, Telecom, and others. 350nm, 250nm, 220nm and 180nm are the various technology nodes used in this market. Hydride Vapor Phase Epitaxy (HVPE), Ammonothermal growth and Metal-Organic Chemical Vapor Deposition (MOCVD) are the various production processes for GaN substrates.

Asia-Pacific region accounts for the maximum share in this market, followed by North America and Europe. Japan, China and Korea accounted for the major production as well as consumption in this market.

The Gallium Nitride substrates possess some key advantages which gives them the edge over other substrates to penetrate into billion dollar markets. Moreover, the existing silicon substrate based power electronics are not sufficient to handle the power requirements. In the era of Internet of Things and green automobiles, the power components are expected to perform better along with saving energy. The GaN substrates are capable of perfectly doing the same and are able to capitalize the high value market.
 
Furthermore, as the competition intensifies, the players focus will also shift towards quality. The sapphire dominance in the overall market is estimated to be present till 2020 and the market will remain fragmented with no company possessing dominance. However, Cree Inc., Sumitomo Electric Industries, Ltd are forecast to increase their market share in the overall market by remaining dominant in Silicon Carbide and GaN markets respectively.

MSE Supplies is a leading global supplier of GaN single crystal substrates with low dislocation density and uniform surface quality.