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MSE PRO 10 mm x 10 mm 6H Semi-Insulating Type SiC, Research Grade, Silicon Carbide Crystal Substrate, DSP
MSE PRO 1" JGS3 Fused Silica Wafer, 500 μm Thick, DSP, w/ Bevel, Primary Flat Only
MSE PRO 4 inch Titanium Nitride (TiN) Thin Film on Silicon Wafer
MSE PRO Tellurium Dioxide (TeO2) Single Crystal Substrates
MSE PRO 2 inch Silicon Carbide Wafers 4H/6H P-Type SiC Substrates (Dummy Grade)
MSE PRO 6" JGS1 Ultraviolet (UV) Grade Fused Silica Wafer, 500 um, DSP, w/ Bevel, Primary Flat Only
MSE PRO 4" JGS3 Fused Silica Wafer, 500 μm Thick, DSP, w/ Bevel, Primary Flat Only
MSE PRO 2" JGS3 Fused Silica Wafer, 500 μm Thick, DSP, w/ Bevel, Primary Flat Only
MSE PRO 3" JGS1 Ultraviolet (UV) Grade Fused Silica Wafer, 500 um, DSP, w/Bevel, Primary Flat Only
MSE PRO 4 inch Copper (Cu) Thin Film on Silicon Wafer
MSE PRO 2 inch Aluminum Nitride AlN (1um) Template on Sapphire (0001)
MSE PRO 6 inch N-type SiC Epitaxial Layer on SiC Substrates, Epi Thickness: 11 um
MSE PRO 4 Inch Lithium Niobate Thin Film on Insulator Wafers (LNOI) Z-cut
MSE PRO Monolayer Graphene on 4 in SiO2/Si Wafer
MSE PRO 150 mm P Type (B-doped) Prime Grade Silicon Wafer <100>, SSP, 10~20 ohm-cm
Neodymium Doped Gadolinium Gallium Garnet (Nd:Gd3Ga5O12) (Nd:GGG) Crystals and Substrates
Piezoelectric Langasite La3Ga5SiO14 (LGSO) Crystal
MSE PRO 2 inch Aluminum Scandium Nitride AlScN Template on Sapphire (0001)
MSE PRO 5 x 10 mm (20-21) Plane N-type undoped Free-Standing Gallium Nitride (GaN) Single Crystal
4 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating SiC Substrates