MSE PRO 4 inch Aluminum Scandium Nitride AlScN Template on Silicon Substrate

MSE PRO™ 4 inch Aluminum Scandium Nitride AlScN Template on Silicon Substrate

• Product SKU#: WA0272
• Substrate Thickness: Silicon, 525 +/- 30 µm 
• Substrate Orientation: <100>
• Diameter: 100 mm +/- 0.5 mm
• Resistivity: > 500 ohm.cm
• Thickness of AlScN layer: 800 nm
• Usable Area: > 90%
• Total Thickness Variation (TTV): ≤ 15 µm
• Bow/Warp: ≤ 30 µm
• Surface Roughness: Ra ≤ 10 nm (5 µm x 5 µm area)
• Polishing: Single side polished (SSP) is standard. Double-side polished (DSP) is available upon request.
• Package: single wafer containers

Aluminum scandium nitride (AlScN) on silicon refers to the deposition of a thin AlScN on a silicon substrate. This process involves growing a layer of AlScN material on the surface of a sapphire wafer using techniques such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). Aluminum scandium nitride (AlScN) is a a wide-band gap semiconductor material composed of aluminum (Al), scandium (Sc), and nitrogen (N). Due to its excellent piezoelectric and acoustic properties, it is an ideal material for high-frequency acoustic devices. It is considered as the most promising substrate for 5G radio frequency SAW/BAW filters.

References: 

1. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire. Applied physics letters 108, no. 23 (2016): 231601

2. Properties of Sc x Al 1-x N (x= 0.27) thin films on sapphire and silicon substrates upon high temperature loading. Microsystem Technologies 22 (2016): 1679-1689