6 in Silicon Carbide 4H-SiC N-Type SiC Ingot
SKU: SOWA0310
To better serve you, we would like to discuss your specific requirement.
Please Contact Us for a quote.
6 in Silicon Carbide 4H-SiC N-Type SiC Ingot
Grade | Production Grade | Dummy Grade |
Diameter | 150.0 mm +/- 0.5 mm | |
Wafer Orientation | Off axis: 4.0 deg toward <11-20> +/-0.5 deg | |
Electrical Resistivity | 0.015~0.028 ohm-cm | |
Primary Flat | {10-10} +/- 5.0 deg | |
Primary Flat Length | 47.5 mm +/- 2.0 mm | |
Cracks inspected by high intensity light | <1mm in radial | <3mm in radial |
Hex Plates inspected by high intensity light* | Cumulative area 1 % | Cumulative area 5 % |
Polytype Areas inspected by high intensity light* | None | Cumulative area 10% |
MicroPipe Density | <5cm-2 | <50cm-2 |
Edge chipping | 2 allowed, 1mm each | 3 allowed, 3 mm each |
Note | The slicing wafer thickness <1mm, >80% (two ends not included) meet the above requirements | The slicing wafer thickness <1mm, >70% (two ends not included) meet the above requirements |
Notes:
* Defect limits are applicable to the entire wafer surface except for the edge exclusion area, where defects are present.
** The scratches are checked on the Si face only.
PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS
Property |
4H-SiC Single Crystal |
6H-SiC Single Crystal |
Lattice Parameters (Å) |
a=3.076 c=10.053 |
a=3.073 c=15.117 |
Stacking Sequence |
ABCB |
ABCACB |
Density |
3.21 |
3.21 |
Mohs Hardness |
~9.2 |
~9.2 |
Thermal Expansion Coefficient (CTE) (/K) |
4-5 x 10-6 |
4-5 x10-6 |
Refraction Index @750nm |
no = 2.61 ne = 2.66 |
no = 2.60 ne = 2.65 |
Dielectric Constant |
c ~ 9.66 |
c ~ 9.66 |
Doping Type |
N-type or Semi-insulating |
N-type or Semi-insulating |
Thermal Conductivity (W/cm-K @298K) (N-type, 0.02 ohm-cm) |
a~4.2 c~3.7 |
|
Thermal Conductivity (W/cm-K @298K) (Semi-insulating type) |
a~4.9 c~3.9
|
a~4.6 c~3.2
|
Band-gap (eV) |
3.23 |
3.02 |
Break-Down Electrical Field (V/cm) |
3-5 x 106 |
3-5 x 106 |
Saturation Drift Velocity (m/s) |
2.0 x 105 |
2.0 x 105 |
Wafer and Substrate Sizes |
Wafers: 2, 4, 6, 8 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request |
Price
MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to eight (8) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.
Customization
Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.