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6 in Silicon Carbide 4H-SiC N-Type SiC Ingot– MSE Supplies LLC

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6 in Silicon Carbide 4H-SiC N-Type SiC Ingot - MSE Supplies LLC

6 in Silicon Carbide 4H-SiC N-Type SiC Ingot

SKU: SOWA0310

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Please Contact Us for a quote.

6 in Silicon Carbide 4H-SiC N-Type SiC Ingot

Grade Production Grade Dummy Grade
Diameter 150.0 mm +/- 0.5 mm
Wafer Orientation Off axis: 4.0 deg toward <11-20> +/-0.5 deg
Electrical Resistivity 0.015~0.028 ohm-cm
Primary Flat {10-10} +/- 5.0 deg
Primary Flat Length 47.5 mm +/- 2.0 mm
Cracks inspected by high intensity light <1mm in radial <3mm in radial
Hex Plates inspected by high intensity light* Cumulative area 1 % Cumulative area 5 %
Polytype Areas inspected by high intensity light* None Cumulative area 10%
MicroPipe Density <5cm-2 <50cm-2
Edge chipping 2 allowed, 1mm each 3 allowed, 3 mm each
Note The slicing wafer thickness <1mm, >80% (two ends not included) meet the above requirements The slicing wafer thickness <1mm, >70% (two ends not included) meet the above requirements

Notes:

* Defect limits are applicable to the entire wafer surface except for the edge exclusion area, where defects are present.

** The scratches are checked on the Si face only.

Inside the wafer case, the side with laser marking of the serial number is the Carbon face. The Si face is facing down and the Carbon face is facing up. 

PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property

4H-SiC Single Crystal

6H-SiC Single Crystal

Lattice Parameters (Å)

a=3.076

c=10.053

a=3.073

c=15.117

Stacking Sequence

ABCB

ABCACB

Density

3.21

3.21

Mohs Hardness

~9.2

~9.2

Thermal Expansion Coefficient (CTE) (/K)

4-5 x 10-6

4-5 x10-6

Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant

c ~ 9.66

c ~ 9.66

Doping Type

N-type or Semi-insulating

N-type or Semi-insulating

Thermal Conductivity (W/cm-K @298K)

(N-type, 0.02 ohm-cm)

a~4.2

c~3.7

 

Thermal Conductivity (W/cm-K @298K)

(Semi-insulating type)

a~4.9

c~3.9

 

a~4.6

c~3.2

 

Band-gap (eV)

3.23

3.02

Break-Down Electrical Field (V/cm)

3-5 x 106

3-5 x 106

Saturation Drift Velocity (m/s)

2.0 x 105

2.0 x 105

Wafer and Substrate Sizes

Wafers: 2, 4, 6, 8 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request

 

Price

MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to eight (8) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.

Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.