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MSE PRO 2 inch Mg-doped P-type GaN 4.5 um Gallium Nitride Template on Sapphire, 4.4E19 Doping Concentration
SKU: WA0112
Features for 2 in Mg-doped P-type Gallium Nitride Template on Sapphire Substrate
Product SKU#: WA0112 for SSP
- Conductivity type: P-Type (Mg-doped)
- Dimension: 50.8 mm +/- 0.1 mm (2 inch diameter)
- GaN Thickness: 4.5 +/- 0.5 um
- Usable area: > 90%
- Orientation of GaN: C plane (0001) off angle toward A-axis 0.2 ± 0.1 deg
- Orientation Flat of GaN: (1-100) +/- 0.2 deg, length 16.0 +/- 1.0 mm
- Total Thickness Variation: < 15 um
- Resistivity (300K): ~10 Ohm-cm
- Doping Concentration: > 4.4x1019 cm-3
- Sapphire substrate thickness: 430 +/- 25 um
- Orientation of sapphire substrate: C plane (0001) off angle toward M-axis 0.2 ± 0.1 deg
- Orientation Flat of sapphire: (11-20) 0 ± 0.2 deg, length 16.0 +/- 1.0 mm
- Substrate Structure: GaN/Sapphire (0001)
- Polishing of sapphire substrate: single side polished (SSP) or double size polished (DSP).
- Package: packaged in a clean room environment, in cassettes or single wafer containers.
Related References
1. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
DOI: 10.1143/JJAP.31.L139
Low-resistivity p-type GaN films were obtained by N2-ambient thermal annealing at temperatures above 700 C for the first time.
Thermal Annealing Effects on P-Type Mg-Doped GaN Films. Available from: https://www.researchgate.net/publication/248677447_Thermal_Annealing_Effects_on_P-Type_Mg-Doped_GaN_Films.
2. Optical characterization of Mg-doped GaN films grown by metal organic chemical vapor phase deposition
https://doi.org/10.1063/1.1289794
Scanning electron microscopy, micro-Raman, and photoluminescence (PL)measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metal organic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1E19 to 1E21 cm3 have been studied. In the scanning micro graphs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the triangular regions, where the presence of cubic inclusions was confirmed by micro-Raman measurements. The excitation dependence and temperature behavior of these lines enable us to identify their excitonic nature. From our study we conclude that the interface region between these defects and the surrounding wurtzite GaN could be responsible for PL lines