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MSE PRO™ 4 inch GaN Gallium Nitride Template on Sapphire (0001) Red LED Wafer
Other layer structures can be custom made upon request. Please contact us for a quote.
| Substrate |
| Type |
Flat Sapphire |
| Polish |
Single side polished (SSP) |
| Dimension |
100 ± 0.2 mm |
| Orientation |
C plane (0001) off angle toward M-axis 0.2 ± 0.1° |
| Thickness |
650 ± 25 µm |
| Epilayer |
| Structure |
~75nm pGaN / 0.25µm MQWs / 2.0±0.2µm nGaN / 3.6±0.2µm uGaN |
| Total Thickness |
6 ± 0.5 µm |
| Roughness (Ra) |
< 1.0 nm |
| Dislocation Density |
< 1 × 10^8 cm-2
|
| Wavelength (Red) |
630 ± 5 nm |
| Wavelength FWHMs (Red) |
< 70 nm |
| General |
| Usable Area |
Edge exclusion 2mm |
| Package |
Packaged in a cleanroom in a single wafer container |
