MSE PRO As-cut Silicon Carbide Wafers 4H-SiC Substrates N-Type

Grade

Production Grade

Dummy Grade

Diameter

6" or 4"

Thickness

450 um +/- 25 um

Wafer Orientation

Off axis: 4.0 deg toward <11-20> +/-0.5 deg

Micropipe Density (MPD)

≤5 cm^-2

≤50 cm^-2

Edge exclusion

3 mm

Cracks inspected by high intensity light

None

10 allowed, 2 mm

Hex Plates inspected by high intensity light*

Cumulative area 1 %

Cumulative area 3 %

Polytype Areas inspected by high intensity light*

None

Cumulative area 5%

Edge chipping

1 allowed, 1 mm each

5 allowed, 1 mm each

Property

4H-SiC Single Crystal

6H-SiC Single Crystal

Lattice Parameters (Å)

a=3.076

c=10.053

a=3.073

c=15.117

Stacking Sequence

ABCB

ABCACB

Density

3.21

3.21

Mohs Hardness

~9.2

~9.2

Thermal Expansion Coefficient (CTE) (/K)

4-5 x 10^-6

4-5 x10^-6

Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant

c ~ 9.66

c ~ 9.66

Doping Type

N-type or Semi-insulating

N-type or Semi-insulating

Thermal Conductivity (W/cm-K @298K)

(N-type, 0.02 ohm-cm)

a~4.2

c~3.7

Thermal Conductivity (W/cm-K @298K)

(Semi-insulating type)

a~4.9

c~3.9

a~4.6

c~3.2

Band-gap (eV)

3.23

3.02

Break-Down Electrical Field (V/cm)

3-5 x 10⁶

3-5 x 10⁶

Saturation Drift Velocity (m/s)

2.0 x 10⁵

2.0 x 10⁵

Wafer and Substrate Sizes

Wafers:4, 6 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request