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MSE PRO InAs Indium Arsenide Single Crystal Substrates
SKU: SU1721
MSE PRO™ InAs Indium Arsenide Single Crystal Substrates
Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1 ~ 3.8 um. The detectors are usually photovoltaicphotodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Find indium arsenide for sale here today
Available Orientation: <100>
Available Sizes: 5x5x0.5 mm, 10x10x0.5 mm, 2 inch diameter, 30 mm diameter.
Doping Options: Undoped, S doping, Zn doped, and Sn doped.
Physical Properties | |
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Chemical formula
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InAs |
Molar mass | 189.740 g/mol |
Density | 5.67 g/cm3 |
Melting point | 942°C (1,728°F; 1,215K) |
Band gap | 0.354 eV (300 K) |
Electron mobility | 40000 cm2/(V*s) |
Thermal conductivity | 0.27 W/(cm*K) (300 K) |
Refractive index(nD)
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3.51 |
Structure | |
Crystal structure
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Zinc Blende |
Lattice constant
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a = 6.0583 Å
|