MSE PRO Production Grade 2 inch Si-Doped N-type Gallium Nitride Single Crystal C plane (0001)

SKU: WA0224

£3,157⁰⁰
Save £379⁰⁰

Production Grade Free-standing (single crystal) GaN substrate, C plane (0001), size 2 inch diameter

Conductivity type: N-type Si-doped

SKU# : WA0224

Dimension: 2" diameter
Thickness: 400 +/- 30 um
Usable area: >90%
Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.55 deg +/- 0.15 deg
Total Thickness Variation: < 15 um
Bow: < 20 um
Resistivity (300K): < 0.05 Ohm.cm
Dislocation Density: < 3 x 10⁶ cm^-2
Polishing: SSP, Front surface: Ra < 0.3 nm, epi-ready polished
Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.

Related Reference

1. Blue InGaN/GaN laser diodes grown on (33) free¨«standing GaN substrates

2.Review: InGaN-BASED LASER DIODES

https://www.jsap.or.jp/jsapi/Pdf/Number01/Vol-1_Cutting%20Edge.pdf