MSE PRO Yttria Stabilized Zirconia (YSZ) Single Crystal Substrates

SKU: SU1505

£11⁰⁰
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YSZ is widely used as an oxide crystal substrate for the epitaxial growth of thin films. Both standard and custom-made products are available from MSE Supplies. Please contact us to request special sizes.

Main Parameters of YSZ crystal substrates
Material	8 mol.% Y₂O₃ stabilized ZrO₂, YSZ (yttria-stabilized zirconia), 8YSZ
Crystal structure	Face Centered Cubic (FCC), CaF₂ type fluorite
Unit cell constant	a = 5.125 A
Melt point (degree C)	2500
Density (g/cm³)	5.9
Hardness	8 - 8.5 Mohs
Thermal expansion (/K)	10.3 x 10^-6
Dielectric constant (@ 1MHz)	27
Tangent loss	0.0054
Growth method	Skull melting, cold crucible method
Sizes	5x5, 10x5, 10x10, 25.4x25.4, 50.8x50.8 mm
Sizes	1 inch diameter, 2 inch diameter, 3 inch diameter, other sizes are available upon request
Thickness	0.5 mm or 1.0 mm or customized
Surface polishing	Single or double side polished (epi-ready CMP)
Crystal orientation	(100), (110), (111), +/- 0.5 degree
Surface roughness, Ra:	< 0.5 nm (5 um x 5 um area)
Package	sealed in class 100 clean bags

References:

Growth of Zirconia Crystals by Skull Melting Technique (Chapter 21 in Crystal Growth Technology)
E. E. Lomonova V. V. Osiko
Book Editor(s): Hans J. Scheel Tsuguo Fukuda
First published: 23 September 2003

Highly electrically conductive indiumtinoxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition
Appl. Phys. Lett. 76, 2740 (2000), https://doi.org/10.1063/1.126461
Hiromichi Ohta, Masahiro Orita, and Masahiro Hirano

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