List of Thermal Expansion Coefficients (CTE) for Natural and Engineered Materials
The thermal expansion coefficients of materials are essential metrics that reveal how materials respond to temperature changes. The materials span a range of engineered and natural substances, and their coefficients shed light on their thermal behaviors. The thermal expansion coefficient is represented by α and quantifies the fractional size change of a substrate per unit temperature variation. Positive coefficients indicate expansion and negative ones showcase contraction.
The thermal expansion coefficients of materials vary significantly and influence structural durability and performance in industries like electronics and construction. The material coefficient of thermal expansion for steel, for example, is determined by how much the structure's dimensions change in response to temperature variations.
Natural materials like copper or aluminum have noteworthy coefficients, while natural stones like granite and marble have more distinct terminal expansion characteristics. That makes these materials essential for use in construction. Polymers like polyethylene's coefficient properties make them a good choice for use in daily products. Composite materials, with their nuanced expansion behaviors, are suited for use in automotive and aerospace applications.
What Is Linear Thermal Expansion?
Linear thermal expansion refers to a material's capacity to expand in length when subjected to an increase in temperature. This happens because the kinetic energy of the material's molecules surges, leading to a vibration that creates more space between them. Conversely, a reduction in temperature, which reduces vibrational energy, causes the material to contract.
The expansion is quantified by using the coefficient of linear expansion, a formula representing the fractional change in length per unit temperature change. The coefficient of linear expansion looks as follows:
- ΔL = L0αΔT
ΔL represents the change in length, α is the coefficient of linear expansion, L0 refers to the start length and ΔT is the temperature adjustment. The linear thermal expansion property is essential to various engineering applications. These applications often include designing components or structures exposed to temperature variations, like bridges.
What Is the Coefficient of Thermal Expansion?
The coefficient of thermal expansion (CTE) is defined as the fractional change in length or volume per unit temperature change. It quantifies a material's propensity to contract or expand as temperatures change. CTE for an area is mathematically expressed as:
- α = ΔL/(L0 * ΔT)
ΔL refers to the change in length, L0 is the original length and ΔT represents the change in temperature.
It is vital for engineers to predict how materials may behave under various temperature fluctuations correctly. This prediction offers critical insights into material choice and structural integrity design considerations. It allows engineers to accommodate these dimensional changes in CTE materials. Materials with lower CTE offer decent dimensional stability. Higher CTE indicates more contraction or expansion in a substrate, which aligns with use in structures that need more flexibility to adjust to temperature changes.
How Are MSE Supplies Products Used?
MSE Supplies is a leading supplier of high-quality materials, equipment and materials characterization services for advanced materials research and manufacturing. Our Analytical Services provide professional Dilatometry and Thermal Expansion Coefficient (CTE) Testing. Alternatively, make use of our dilatometry testing services, which use NETZSCH DIL 402 PC or similar instruments.
The following is a list of the most popular applications of our products, including LED, ferroelectrics, piezoelectric, electro-optical, photonics, high-power electronics and high-frequency power devices.
Materials |
Linear Thermal Expansion Coefficient - α - |
---|---|
(10-6 m/(m K))*) |
|
ABS (Acrylonitrile butadiene styrene) thermoplastic | 73.8 |
ABS -glass fiber-reinforced | 30.4 |
Acetals | 106.5 |
Acetal - glass fiber-reinforced | 39.4 |
Acrylic | 75 |
Alumina (aluminium oxide, Al2O3) (Sputtering Target)(powders)(Milling media) (Sapphire/Single Crystal)(Planetary Milling Jars)(Roller Milling Jars)(High Purity Powders) | 8.1 |
Aluminum (Sputtering Target) | 21 - 24 |
Aluminum Alloy AlSi7Mg (Additive Manufacturing/3D Printing Powder) | 21-22 |
Aluminum Alloy AlSi10Mg (Additive Manufacturing/3D Printing Powder) | 20 |
Aluminum Alloy AlSi12 (Additive Manufacturing/3D Printing Powder) | 20 |
Aluminum Metaphosphate, Al(PO3)3 (High Purity Powder) | 9.6 |
Aluminum nitride (Sputtering Target)(AlN template on Sapphire) | 5.3 |
Amber | 50 - 60 |
Antimony (Sputtering Target) | 9 - 11 |
Arsenic | 4.7 |
Bakelite, bleached | 22 |
Barium | 20.6 |
Barium Fluoride, BaF2 (High Purity Powder)(Single crystal and Substrates)(Sputtering Targets) | 18.1 |
Barium ferrite, | 10 |
Barium Titanate, BaTiO3 (Sputtering Target) (Single Crystal Substrate) | 9.4 |
Benzocyclobutene | 42 |
Beryllium | 11.5 |
Bismuth (Sputtering Target) | 13 |
Bismuth Germanate, Bi4Ge3O12 (Scintillation Crystals) | 7 |
Bismuth Oxide, Bi2O3 (High Purity Powder)(Sputtering Target) | Parallel to a-26.7, b-6.6, c-9.0 |
Boron Carbide,B4C (Sputtering Target) | 4.5 |
Boron Nitride, BN (Sputtering Target) | 1.0 |
Brass | 18.7 |
Brick masonry | 5.5 |
Bronze | 18.0 |
Cadmium (Sputtering Target) | 30 |
Cadmium Difluoride, CdF2 (Sputtering Target) | 21.8 |
Cadmium Selenide, CdSe (Sputtering Target) | Parallel to a-6.26, c-4.28 |
Cadmium Sulfide, CdS (Sputtering Target) | Parallel to a-6.26, c-3.5 |
Cadmium Telluride, CdTe (Sputtering Target) | 4.8 |
Calcium | 22.3 |
Calcium Fluoride, CaF2 (Single Crystal)(Sputtering Target)(Eu doped Scintillation Crystal) | 18.85 |
Calcium Fluoride Europium doped, Eu:CaF2 (Eu doped Scintillation Crystal) | 19.5 |
Cast Iron Gray | 10.8 |
Caoutchouc | 66 - 69 |
Celluloid | 100 |
Cellulose acetate (CA) | 130 |
Cellulose acetate butynate (CAB) | 96 - 171 |
Cellulose nitrate (CN) | 80 - 120 |
Cement | 10.0 |
Cesium Iodide, CsI (Scintillation Crystals) | 54 |
Cerium (Sputtering Target) | 5.2 |
Cerium Dioxide, CeO2 (Sputtering Target) | 11.2 |
Cerium Fluoride, CeF3 (Scintillation Crystal) (Sputtering Target) | Parallel to a-12.9, c-16.5 |
Cerium Oxide, Ce2O3 (High Purity Powder) | 12 |
Chlorinated polyether | 80 |
Chlorinated polyvinylchloride (CPVC) | 66.6 |
Chromium (Sputtering Target) | 6.2 |
Chromium Boride, Cr5B3 (Sputtering Target) | 13.7 |
Chromium Carbide, Cr3C2 (Sputtering Target) | 10.3 |
Chromium Diboride CrB2 (Sputtering Target) | 6.2 - 7.5 |
Chromium Disilicide, CrSi2 (Sputtering Target) | Parallel to a-8.2, c-9.0 |
Chromium Monoboride, CrB | 12.3 |
Chromium Nitride, CrN | 2.3 |
Chromium Nitride, Cr2N | 9.4 |
Chromium Oxide, Cr2O3 (High Purity Powder)(Sputtering Target) | 9.0 |
Clay tile structure | 5.9 |
Cobalt (Sputtering Target) | 12 |
Cobalt Chrome Molybdenum alloy, CoCrMo (Additive Manufacturing/3D Printing Powder) | 11.5 |
Cobalt Chrome Tungsten alloy, CoCrW (Additive Manufacturing/3D Printing Powder) | 21 |
Cobalt Disilicide, CoSi2 | 10 |
Concrete | 14.5 |
Concrete structure | 9.8 |
Constantan | 18.8 |
Copper (Sputtering Target) | 16.6 |
Copper, Beryllium 25 | 17.8 |
Copper Tin alloy, CuSn10 (Additive Manufacturing/3D Printing Powder) | 18 |
Corundum, sintered | 6.5 |
Cupronickel 30% | 16.2 |
Diamond (Carbon) | 1.18 |
Duralumin | 23 |
Dysprosium (Sputtering Target) | 9.9 |
Dysprosium Oxide, Dy2O3 (High Purity Powder)(Sputtering Targets) | 6.6 |
Ebonite | 76.6 |
Epoxy, cast resins & compounds, unfilled | 45 - 65 |
Erbium (Sputtering Target) | 12.2 |
Erbium Oxide, Er2O3 (High Purity Powder)(Sputtering Targets) | 6.6 |
Ethylene ethyl acrylate (EEA) | 205 |
Ethylene vinyl acetate (EVA) | 180 |
Europium (Sputtering Target) | 35 |
Europium Oxide, Eu2O3 (High Purity Powder) | 6.4 |
Fluoroethylene propylene (FEP) | 135 |
Fluorspar, CaF2 (Single Crystal) (Sputtering Target) |
19.5 |
Gadolinium (Sputtering Target) | 9 |
Gadolinium Gallium Garnet (GGG), Gd3Ga5O12 (Single Crystal)(Nd doped Single Crystal) | 8 |
Gadolinium Oxide, Gd2O3 (High Purity Powder) | 7.6 |
Gadolinium Tetraboride, GdB4 | 7.0 |
Gallium | 37 |
Gallium Arsenide, GaAs (Sputtering Target) (Single Crystal Substrates) | 5.73 |
Gallium Oxide, Ga2O3 (Single Crystal Wafer)(High Purity Powder)(Sputtering Target) | Parallel to a-3.77, b-7.8, c-6.34 |
Gallium Nitride, GaN (Single Crystal) | 3.17 |
Germanium (Sputtering Target)(Single Crystal) | 5.9 |
Germanium Oxide, GeO2 (High Purity Powder) | 7.5 |
Germanium Telluride, GeTe (Sputtering Target) | 11.2 |
German silver | 18.4 |
Glass, hard | 5.9 |
Glass, Pyrex | 4.0 |
Glass, plate | 9.0 |
Gold (Sputtering Target) | 14.2 |
Gold - copper | 15.5 |
Gold - platinum | 15.2 |
Granite | 7.9 |
Graphite, pure (Carbon) (Sputtering Target) (Anode Materials) | 2 - 6 |
Gunmetal | 18 |
Gutta percha | 198 |
Hafnium (Sputtering Target) | 5.9 |
Hafnium Carbide, HfC (Sputtering Target) | 6.9 |
Hafnium Dioxide, HfO2 (Sputtering Target) | 6.0 |
Hafnium Disilicide, HfSi2 (Sputtering Target) | 16.4 |
Hafnium Nitride, HfN (Sputtering Target) | 6.9 |
Hard alloy K20 | 6 |
Hastelloy C22 (Sputtering Target) | 12.4 |
Hastelloy C276 (Sputtering Target) | 11.2 |
Hastelloy N (Sputtering Target) | 12.3 |
Holmium (Sputtering Target) | 11.2 |
Holmium Oxide, Ho2O3 (High Purity Powder)(Sputtering Targets) | 7.4 |
Ice, 0oC water | 51 |
Inconel 625 (Additive Manufacturing/3D Printing Powder) | 13.1 |
Inconel 718 (Additive Manufacturing/3D Printing Powder) | 12.8 |
Indium (Sputtering Target) | 33 |
Indium Antimonide, InSb (Sputtering Target) | 5.37 |
Indium Arsinide, InAs (Single Crystal)(Sputtering Target) |
4.52 |
Indium Gallium Zinc Oxide (IGZO), In2Ga2ZnO7 (Sputtering Target) | 4.31 |
Indium Oxide, In2O3 (High Purity Powder)(Sputtering Target) | 7.2 |
Indium Phosphide, InP (Single Crystal) | 4.5 |
Indium Sulfide, In2S3 (Sputtering Target) |
Tetragonal Form: Parallel to a-11.7, c-6.7 Trigonal Form: Parallel to a-14.1, c-26.7 |
Indium Tin Oxide (ITO), In2-xSnxO3 (Sputtering Target)(ITO coated glass and film) | 8 |
Invar | 1.5 |
Iridium (Sputtering Target) | 6.4 |
Iron, pure (Sputtering Target) | 12.0 |
Iron, cast | 10.4 |
Iron, forged | 11.3 |
Iron Boride, FeB (Sputtering Target) | 23 |
(Di)Iron Boride Fe2B (Sputtering Target) | 7.65 |
(Tri)Iron Carbide, Fe3C (Sputtering Target) | 8.6 |
Kapton | 20 |
Langasite (LGSO), La3Ga5SiO14 (Single Crystal) | 16 |
Langatate (LGT), La3Gao5.5Ta0.5O14 (Single Crystal) | 7.65 |
Lanthanum (Sputtering Target) | 12.1 |
Lanthanum Aluminate, LaAlO3 (Single Crystal)(Sputtering Target) | 9.4 |
Lanthanum Fluoride, LaF3 (Sputtering Target) | Parallel to a-15.8, c-11 |
Lanthanum Hexaboride, LaB6 (Sputtering Target) | 6.2 |
Lanthanum Manganate, LaMnO3 (Sputtering Target) | 11.62 |
Lanthanum Oxide, La2O3 (High Purity Powder) | 8.6 |
Lanthanum-Strontium Aluminium Tantalate (LSAT), (La0.18Sr0.82)(Al0.59Ta0.41)O3 (Single Crystal) | 10 |
Lead (Sputtering Target) | 28.9 |
Lead Fluoride, PbF2 (Single Crystal)(Sputtering Target) | 29 |
Lead Selenide, PbSe (Sputtering Target) | 19 |
Lead Sulfide, PbS (Sputtering Target) | 20.1 |
Lead Telluride, PbTe (Sputtering Target) | 20.4 |
Lead Tungstate, PbWO4 (Single Crystal) | Parallel to a-29.5, c-12.8 |
Limestone | 8 |
Lithium (Chips for Batteries) | 46 |
Lithium Aluminate, LiALO2 (Single Crystal) | Parallel to a-10.1, c-16.5 |
Lithium Fluoride, LiF (Sputtering Target)(High Purity Powder)(Single Crystal) | 37 |
Lithium Niobate, LiNbO3 (Single Crystal) (Sputtering Target) | Parallel to a-15.4, c-7.5 |
Lithium Tantalate, LiTaO3 (Single Crystal) | Parallel to a-16, c-4 |
Lutetium (Sputtering Target) | 9.9 |
Lutetium Aluminum Garnet (LuAG),Y3Al5O12 | 6.0 |
Lutetium Oxide, Lu2O3 (High Purity Powder) | 7.7 |
Macor | 9.3 |
Magnalium | 23.8 |
Magnesium (Sputtering Target) | 25 |
Magnesium Aluminate, MgAl2O4 (Single Crystal) | 6.72 |
Magnesium Fluoride,MgF2 (Sputtering Target)(Single Crystal)(High Purity Powder) (Single Crystal Substrates) |
Parallel to C axis 13.7 Perpendicular to C axis 8.48 |
Magnesium Oxide, MgO (Sputtering Target)(Crucible)(Single Crystal Substrate)(High Purity Powder) |
10.8 |
Manganese (Sputtering Target) | 22 |
Manganin | 18.1 |
Marble | 5.5 - 14.1 |
Masonry | 4.7 - 9.0 |
Mercury | 61 |
Mica | 3 |
Molybdenum (Sputtering Target) | 5 |
Molybdenum Boride, Mo2B (Sputtering Target) | 4.78 |
Molybdenum Carbide, Mo2C (Sputtering Target) | 7.8 |
Molybdenum Disilicide, MoSi2 (Sputtering Target) | Parallel to a = 5.6, c = 4.1 |
Molybdenum Oxide, MoO3 (Sputtering Target) | 5 |
Monel metal | 13.5 |
Mortar | 7.3 - 13.5 |
Neodymium (Sputtering Target) | 9.6 |
Neodymium Copper Oxide,Nd2CuO4 (Sputtering Target) | 10.1 |
Neodymium Fluoride, NdF3 (Sputtering Target) | Parallel to a-17.4, c-14.7 |
Neodymium Hexaboride, NdB6 (Sputtering Target) | 7.3 |
Neodymium Oxide, Nd2O3 (High Purity Powder) | 14.7 |
Nickel (Sputtering Target) | 13.0 |
Nickel Chromium (Nichrome), NiCr (Sputtering Target) | 14 |
Nickel Oxide, NiO (Sputtering Target) | 10 |
Niobium (Sputtering Target) | 7.3 |
Niobium Carbide, NbC (Sputtering Target) | 7.81 |
Niobium Disilicide, NbSi2 | Parallel to a = 9.1, c = 8.7 |
Niobium Nitride, NbN (Sputtering Target) | 10.1 |
Niobium Oxide, Nb2O5 (Sputtering Target) (High Purity Powder) | 5.6 |
Niobium Selenide, NbSe2 (Sputtering Target) | Parallel to a = 6.6, c = 19.9 |
Niobium Silicide, Nb5Si3 (Sputtering Target) | 7.6 |
Nylon, general purpose | 72 |
Nylon, Type 11, molding and extruding compound | 100 |
Nylon, Type 12, molding and extruding compound | 80.5 |
Nylon, Type 6, cast (Planetary Milling Jar)(Roller Milling Jar) | 85 |
Nylon, Type 6/6, molding compound | 80 |
Oak, perpendicular to the grain | 54 |
Osmium | 5 |
Palladium (Sputtering Target) | 11.8 |
Paraffin | 106 - 480 |
Phenolic resin without fillers | 60 - 80 |
Phosphor bronze | 16.7 |
Plaster | 16.4 |
Plastics | 40 - 120 |
Platinum (Sputtering Target) | 9.0 |
Plutonium | 54 |
Polyacrylonitrile | 70 |
Polyallomer | 91.5 |
Polyamide (PA) | 110 |
Polybutylene (PB) | 130 |
Polycarbonate (PC) | 70.2 |
Polycarbonate - glass fiber-reinforced | 21.5 |
Polyester | 123.5 |
Polyester - glass fiber-reinforced | 25 |
Polyethylene (PE) | 200 |
Polyethylene (PE) - High Molecular Weight | 108 |
Polyethylene terephthalate (PET) (Indium Tin Oxide on PET)(Monolayer Graphene on PET) | 59.4 |
Polyphenylene - glass fiber-reinforced | 35.8 |
Polypropylene (PP), unfilled (Single Crystal, Wafer Substrate Cases) | 100 - 200 |
Polypropylene - glass fiber-reinforced | 32 |
Polystyrene (PS) | 70 |
Polysulfone (PSO) | 55.8 |
Polyurethane (PUR), rigid (Planetary and Roller Milling Jars) | 57.6 |
Polyvinyl chloride (PVC) | 50.4 |
Polyvinylidene fluoride (PVDF) | 127.8 |
Porcelain, Industrial | 6.5 |
Potassium | 83 |
Potassium Bromide, KBr (Single Crystal) | 43 |
Potassium Chloride, KCl (Single Crystal) | 36 |
Potassium Tantalate, KTaO3 (Single Crystal) | 4.03 |
Praseodymium (Sputtering Target) | 6.7 |
Praseodymium Fluoride, PrF3 (Sputtering Target) | Parallel to a-16.4, c-14 |
Praseodymium Oxide, Pr6O11 (High Purity Powder)(Sputtering Targets) | 12 |
Promethium | 11 |
Quartz (Single Crystal Wafer)(Monolayer Graphene on Quartz) | 0.77 - 1.4 |
Rhenium (Sputtering Target) | 6.7 |
Rhenium Disilicide, ReSi2 | Parallel to a = 4.2, c = 7.5 |
Rhodium | 8 |
Rock salt | 40.4 |
Rubber, hard | 77 |
Ruthenium (Sputtering Target) | 9.1 |
Samarium (Sputtering Target) | 12.7 |
Samarium Oxide, Sm2O3 (High Purity Powder)(Sputtering Targets) | 8.5 |
Sandstone | 11.6 |
Sapphire (Single Crystal and Wafers) | Please see this page |
Scandium (Sputtering Target) | 10.2 |
Scandium Oxide (High Purity Powder)(Sputtering Targets) | 6.7 |
Selenium (Sputtering Target) | 3.8 |
Silicon (Single Crystal Wafer)(Sputtering Target)(N-type Sputtering Target)(P-type Sputtering Target) | Please see this page |
Silicon Carbide, SiC (Single Crystal Wafer) (Sputtering Target) | Please see this page |
Silicon Dioxide (Fused Silica, amorphous), SiO2 (Sputtering Target)(Wafers and Substrates)(High Purity Powder) |
5.6 |
Silicon Nitride,Si3N4 (Sputtering Target) | 4.3 |
Silver (Sputtering Target) | 19.5 |
Sitall | 0.15 |
Slate | 10.4 |
Sodium | 70 |
Sodium Chloride, NaCl (Single Crystal) | 44 |
Sodium Fluoride, NaF (Sputtering Target) | 34 |
Solder lead - tin, 50% - 50% | 24.0 |
Speculum metal | 19.3 |
Steatite | 8.5 |
Steel | 12.0 |
Steel 18 Ni(300) (Maraging) (Additive Manufacturing/3D Printing Powder) | 10.3 |
Steel Invar 36 (Additive Manufacturing/3D Printing Powder) | 1.3 |
Steel M2 (Tool)(Additive Manufacturing/3D Printing Powder) | 11 |
Steel Stainless Austenitic (304) (Milling media)(Planetary Milling Jars)(Roller Milling Jars) | 17.3 |
Steel Stainless Austenitic (310) | 14.4 |
Steel Stainless Austenitic (316)(Additive Manufacturing/3D Printing Powder)(Milling media)(Roller Milling Jars)(Planetary Milling Jars) | 16.0 |
Steel Stainless Ferritic (410)(Additive Manufacturing/3D Printing Powder) | 9.9 |
Steel Stainless 17-4PH (Additive Manufacturing/3D Printing Powder) | 10.8 |
Steel Stainless 440C (Additive Manufacturing/3D Printing Powder) | 10.2 |
Strontium | 22.5 |
Strontium Fluoride, SrF2 (Sputtering Target) | 18.4 |
Strontium Titanate, SrTiO3 (Sputtering Target)(Single Crystal Wafers & Substrates) (Fe doped single Crystal)(Nb doped single Crystal) | 9 |
Tantalum (Sputtering Target) | 6.5 |
Tantalum Carbide, TaC (Sputtering Target) | 6.3 |
Tantalum Diboride, TaB2 | 8.2 |
Tantalum Disilicide, TaSi2 (Sputtering Target) | Parallel to a = 6.8, c = 6.1 |
Tantalum Nitride, TaN (Sputtering Target) | 3.6 |
Tantalum Pentoxide, Ta2O5 (Sputtering Target)(High Purity Powder) | 6.7 |
Tantalum Sulfide, TaS2 (Sputtering Target) | 12 - 15 |
Teflon, (Sputtering Target)(Planetary Milling Jars)(Roller Milling Jars) | 120 - 170 |
Tellurium (Sputtering Target) | 36.9 |
Tellurium Dioxide,TeO2 (Single Crystal) | Parallel to a = 19.5, c = 6.1 |
Terbium (Sputtering Target) | 10.3 |
Terne | 11.6 |
Thallium | 29.9 |
Thorium | 12 |
Thulium (Sputtering Target) | 13.3 |
Thulium Oxide, Tm2O3 (High Purity Powder)(Sputtering Targets) | 6.6 |
Tin (Sputtering Target) | 23.4 |
Tin Oxide SnO2 (Sputtering Targets) | 4.0 |
Titanium (Sputtering Target) | 8.6 |
Titanium Alloy Ti-6Al-4v (TC4)(Additive Manufacturing/3D Printing Powder) | 8.7 - 9.1 |
Titanium Carbide, TiC (Sputtering Target) | 7.4 |
Titanium Diboride, TiB2 (Sputtering Targets) | 7 |
Titanium Dioxide (Rutile), TiO2 (Single Crystal)(High Purity Powder)(Sputtering Target) | Parallel to a = 7.14, c = 9.19 |
Titanium Disilicide, TiSi2 (Sputtering Target) | Parallel to a = 6.9, c = 5.4 |
Titanium Monoxide, TiO (Sputtering Target) | 6.6 |
Titanium Nitride, TiN (Sputtering Target) | 9.4 |
Titanium (III) Oxide, Ti2O3 (High Purity Powder) | 7.6 |
Titanium Silicide, Ti5Si3 | 7.5 |
Topas | 5 - 8 |
Tungsten (Sputtering Target) | 4.4 |
Tungsten Carbide (Cobalt Stabilized), WC-6%Co (Sputtering Target)(Milling Media) (Planetary Milling Jars)(Pellet Pressing Die) | 5.5(pure) 4.9 (6% Co) |
Tungsten Diboride, WB2 | Parallel to a-6.5, c-8.8 |
Tungsten Diselenide, WSe2 (Sputtering Target) | 7 |
Tungsten Disilicide, WSi2 (Sputtering Target) | Parallel to a-6.04, c-9.39 |
Tungsten Disulfide, WS2 (Sputtering Target) | 7 - 10 |
Tungsten Ditelluride, WTe2 (Sputtering Target) | Parallel to a-10.1, b-7.5, c-4.5 |
Tungsten (VI) Oxide, WO3 (High purity Powder)(Sputtering Target) | 8 - 15 |
Uranium | 13.9 |
Vanadium (Sputtering Target) | 8 |
Vanadium Carbide, VC (Sputtering Target) | 7.3 |
Vanadium Disilicide, VSi2 (Sputtering Target) | Parallel to a-8.0, c-7.5 |
Vanadium Nitride, VN | 8.1 |
Vanadium Oxide, V2O5 (Sputtering Target) | Parallel a-3.3, b- -1.7, c-42.2 |
Vinyl Ester | 16 - 22 |
Vulcanite | 63.6 |
Wax | 2 - 15 |
Wedgwood ware | 8.9 |
Wood, fir | 3.7 |
Wood, parallel to grain | 3 |
Wood, across (perpendicular) to grain | 30 |
Wood, pine | 5 |
YCOB, Ca4YO(BO3)3 (NLO Crystal) |
Parallel a-9.9, b-8.2, c-12.8 |
Ytterbium (Sputtering Target) | 26.3 |
Ytterbium Fluoride, YbF3 (Sputtering Target) | 8.5 |
Ytterbium Oxide, Yb2O3 (High Purity Powder)(Sputtering Targets) | 8.5 |
Yttrium (Sputtering Target) | 10.6 |
Yttrium Aluminum Garnet (YAG),Y3Al5O3 (YAG Single Crystal)(Ce:YAG single Crystal)(Er:YAG Single Crystal)(Nd:YAG Single Crystal)(Yb:YAG Single Crystal)(Ce:YAG LED Phosphor) | 6.1(undoped) |
Yttrium Fluoride, YF3 (Sputtering Target) | 28.5 |
Yttrium Oxide, Y2O3 (High Purity Powder)(Sputtering Targets) | 8.1 |
Yttrium Orthovanadate, YVO4 (Single Crystal) (Nd doped Single Crystal) | Parallel to a = 4.43, c = 11.37 |
Zinc (Sputtering Target) | 29.7 |
Zinc Oxide, ZnO (Single Crystal)(Sputtering Target)(High Purity Powder) | Parallel to a = 6.5, c = 3.7 |
Zinc Selenide, ZnSe (Sputtering Target) | 7.1 |
Zinc Sulfide, ZnS (Sputtering Target) | 6.5 |
Zinc Telluride, ZnTe (Sputtering Target) | 8.19 |
Zirconium (Sputtering Target) | 5.7 |
Zirconium Carbide, ZrC (Sputtering Target) | 6.7 |
Zirconium Diboride, ZrB2 (Sputtering Target) | Parallel to a = 6.7, c = 6.9 |
Zirconium Disilicide, ZrSi2 (Sputtering Target) | Parallel to a = 1.1, c = 8.6 |
Zirconium Nitride, ZrN (Sputtering Target) | 7.2 |
Zirconia, ZrO2 (High Purity Powder) | 7 |
Yttria Stabilized Zirconia (YSZ), 3-8% Y2O3 /ZrO2 (Sputtering Target)(Single Crystal)(Milling Media)(Planetary Milling Jars)(High Purity Powder) | 3% = 10.8, 8% = 10.5 |
*) m/m = meter per meter
Most values for temperature are set at 25 oC (77 oF):
- tK = tC + 273.16
- 1 in (inch) = 25.4 mm
- 1 ft (foot) = 0.3048 m
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MSE Supplies, a U.S.-based supplier, is trusted by over 5,000 customers worldwide. We stand behind our promise of high-quality products with competitive pricing and dependable technical support from Ph.D. Scientists. Shop our Single Crystals, Wafers and Substrates, which are used for many applications. Our product selection also includes Gallium Nitride (GaN) Substrates and Wafers. Shop our Silicon Carbide (SiC) wafers in sizes up to 6-inch diameters, including N-Type and Semi-Insulating Types. We also provide the most comprehensive selection of sputtering targets, both standard and custom-made, on the market. Contact us today to submit a customization request form or email us directly at sales@msesupplies.com.