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MSE PRO 10 mm x 10 mm 6H Semi-Insulating Type SiC, Research Grade, Silicon Carbide Crystal Substrate, DSP
MSE PRO 1" JGS3 Fused Silica Wafer, 500 μm Thick, DSP, w/ Bevel, Primary Flat Only
MSE PRO 4 inch Titanium Nitride (TiN) Thin Film on Silicon Wafer
MSE PRO Tellurium Dioxide (TeO2) Single Crystal Substrates
MSE PRO 2 inch Silicon Carbide Wafers 4H/6H P-Type SiC Substrates (Dummy Grade)
MSE PRO Chemical Vapor Deposition (CVD) Monolayer Molybdenum Diselenide (MoSe2) Film
MSE PRO Chemical Vapor Deposition (CVD) Monolayer Tungsten Diselenide (WSe2) Film
MSE PRO 6" JGS1 Ultraviolet (UV) Grade Fused Silica Wafer, 500 um, DSP, w/ Bevel, Primary Flat Only
MSE PRO 4" JGS3 Fused Silica Wafer, 500 μm Thick, DSP, w/ Bevel, Primary Flat Only
MSE PRO 2" JGS3 Fused Silica Wafer, 500 μm Thick, DSP, w/ Bevel, Primary Flat Only
MSE PRO 3" JGS1 Ultraviolet (UV) Grade Fused Silica Wafer, 500 um, DSP, w/Bevel, Primary Flat Only
MSE PRO 4 inch Copper (Cu) Thin Film on Silicon Wafer
MSE PRO 2 inch Aluminum Nitride AlN (1um) Template on Sapphire (0001)
MSE PRO 6 inch N-type SiC Epitaxial Layer on SiC Substrates, Epi Thickness: 11 um
MSE PRO 4 Inch Lithium Niobate Thin Film on Insulator Wafers (LNOI) Z-cut
MSE PRO Monolayer Graphene on 4 in SiO2/Si Wafer
MSE PRO 150 mm P Type (B-doped) Prime Grade Silicon Wafer <100>, SSP, 10~20 ohm-cm
MSE PRO 2 inch Aluminum Scandium Nitride AlScN Template on Sapphire (0001)
MSE PRO 5 x 10 mm (20-21) Plane N-type undoped Free-Standing Gallium Nitride (GaN) Single Crystal
MSE PRO 100 mm N Type (P-doped) Prime Grade Silicon Wafer <100>, SSP, 0.001-0.01 ohm-cm