220 gallium nitride MOCVD reactors to be installed in 2015 for LED production
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View Gallium Nitride (GaN) product offerings on MSE Supplies website:
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According to John Wallace, Editor of LaserFocusWorld, "LEDs as a business are growing rapidly in China, spurring purchase of the high-unit-cost capital equipment needed for LED fabrication. Due to the aggressive expansion plans of some Chinese LED companies, 220 metal-organic chemical-vapor-deposition (MOCVD) gallium nitride (GaN) reactors will be installed in 2015, according to the latest data in the IHS LED Intelligence Service. (MOCVD reactors are used to deposit GaN-based epitaxial films on substrates such as sapphire, silicon, or GaN, providing the LED's light-emitting structure.)"
Top 20 cumulative MOCVD merchant tool customers in the LED industry by the end of Q4'2014
For more info, see https://technology.ihs.com/Services/467369/led-intelligence-service
Source: Alice Tao, senior market analyst, IHS
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- Tags: epitaxial films, Gallium Nitride, GaN, LED, MOCVD