Graphene Field-Effect Transistors GFET (Die size 10 mm x 10 mm) for Sensing Applications

The ME0627 GFET chip provides 36 graphene devices dispersed in a grid pattern on the chip. Thirty devices have a Hall-bar geometry and six have a 2-probe geometry. The Hall-bar devices can be used for Hall-bar measurements as well as 4-probe and 2-probe devices. There are varying graphene channel dimensions to allow investigation of geometry dependence on device properties. It has Cr/Au contacts which are inert and stable.

Graphene Oxide FET chip is also available at MSE Supplies.

SKU#: ME0627

Measurement Protocols and Handling Instructions

FEATURES

State-of-the-art GFETs utilizing high-quality graphene
Devices not encapsulated ready for your functionalization
Perfect platform device for new sensor research and development
36 individual GFETs per chip
Mobilities typically in excess of 1000 cm²/V.s
Processed in Clean Room Class 1000

APPLICATIONS

Graphene device research
Chemical sensors
Biological sensors (biosensors)
Bioelectronics
Magnetic sensors
Photodetectors

TYPICAL SPECIFICATIONS
Chip dimensions	10 mm x 10 mm
Chip thickness	675 μm
Number of GFETs per chip	36
Gate Oxide thickness	90 nm
Gate Oxide material	SiO₂
Resistivity of substrate	1-10 Ω.cm
Metallization	Chromium/Gold 2/50 nm
Graphene field-effect mobility	> 1000 cm²/V.s
Dirac point	< 50 V
Yield	> 75 %

ABSOLUTE MAXIMUM RATINGS
Maximum gate-source voltage	± 50 V
Maximum temperature rating	150 °C
Maximum drain-source current density	107 A.cm^-2

CHANNEL GEOMETRIES
Description	Width (µm)	Length 1 (µm)	Length 2 (µm)	Quantity
Standard	50	30	50	12
Varying Width	10	30	50	1
	20			1
	30			1
	40			1
	100			1
	200			1
Large Square	100	80	100	1
Large Square	200	180	200	1
Varying Length	50	10	30	1
		20	40	1
		40	60	1
		50	70	1
		80	100	1
		180	200	1
Small 2-probe	5	5	-	3
Small 2-probe	10	10	-	3

References:

W. Fu, L. Jiang, E.P. van Geest, L.M.C. Lima, G.F. Schneider Sensing at the Surface of Graphene Field‐Effect Transistors. Advanced Materials Vol 29(6), 2017.

J. Ping, R. Vishnubhotla, A. Vrudhula, and A.T.C. Johnson Scalable Production of High-Sensitivity, Label-Free DNA Biosensors Based on Back-Gated Graphene Field Effect Transistors. ACS Nano Vol 10(9), 2016.

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